Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx:H films

Kyung Dong Lee; Kwang Sun Ji; Soohyun Bae; Seongtak Kim; Hyunho Kim; Jae Eun Kim; Yoon Chung Nam; Sungjin Choi; Myeong Sang Jeong; Min Gu Kang; Hee Eun Song; Yoonmook Kang; Hae Seok Lee; Donghwan Kim

doi:10.1166/jnn.2017.14272

Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiN_x:H films

Kyung Dong Lee, Kwang Sun Ji, Soohyun Bae, Seongtak Kim, Hyunho Kim, Jae Eun Kim, Yoon Chung Nam, Sungjin Choi, Myeong Sang Jeong, Min Gu Kang, Hee Eun Song, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Hydrogenated silicon nitride (SiN_x:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

Original language	English
Pages (from-to)	4687-4693
Number of pages	7
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	7
DOIs	https://doi.org/10.1166/jnn.2017.14272
Publication status	Published - 2017

Keywords

Passivation
Plasma-enhanced chemical vapor deposition frequency
Silicon nitride
Silicon solar cell
Surface damage

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2017.14272

Cite this

@article{c35390e70a1c4ceaaaab96d499e9b89b,

title = "Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx:H films",

abstract = "Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.",

keywords = "Passivation, Plasma-enhanced chemical vapor deposition frequency, Silicon nitride, Silicon solar cell, Surface damage",

author = "Lee, {Kyung Dong} and Ji, {Kwang Sun} and Soohyun Bae and Seongtak Kim and Hyunho Kim and Kim, {Jae Eun} and Nam, {Yoon Chung} and Sungjin Choi and Jeong, {Myeong Sang} and Kang, {Min Gu} and Song, {Hee Eun} and Yoonmook Kang and Lee, {Hae Seok} and Donghwan Kim",

note = "Funding Information: This work was supported by the New and Renewable Energy Core Technology Program (Grant No. 20133010011780) of the Korea Institute of Energy, Technology, Evaluation, and Planning (KETEP), funded by the Ministry of Trade, Industry, and Energy of the Republic of Korea and by the National Research Foundation of Korea Grant funded by the Korean Government (MSIP) (2016, University-Institute cooperation program). Publisher Copyright: Copyright {\textcopyright} 2017 American Scientific Publishers. All rights reserved.",

year = "2017",

doi = "10.1166/jnn.2017.14272",

language = "English",

volume = "17",

pages = "4687--4693",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "7",

}

TY - JOUR

T1 - Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx:H films

AU - Lee, Kyung Dong

AU - Ji, Kwang Sun

AU - Bae, Soohyun

AU - Kim, Seongtak

AU - Kim, Hyunho

AU - Kim, Jae Eun

AU - Nam, Yoon Chung

AU - Choi, Sungjin

AU - Jeong, Myeong Sang

AU - Kang, Min Gu

AU - Song, Hee Eun

AU - Kang, Yoonmook

AU - Lee, Hae Seok

AU - Kim, Donghwan

N1 - Funding Information: This work was supported by the New and Renewable Energy Core Technology Program (Grant No. 20133010011780) of the Korea Institute of Energy, Technology, Evaluation, and Planning (KETEP), funded by the Ministry of Trade, Industry, and Energy of the Republic of Korea and by the National Research Foundation of Korea Grant funded by the Korean Government (MSIP) (2016, University-Institute cooperation program). Publisher Copyright: Copyright © 2017 American Scientific Publishers. All rights reserved.

PY - 2017

Y1 - 2017

N2 - Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

AB - Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

KW - Passivation

KW - Plasma-enhanced chemical vapor deposition frequency

KW - Silicon nitride

KW - Silicon solar cell

KW - Surface damage

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U2 - 10.1166/jnn.2017.14272

DO - 10.1166/jnn.2017.14272

M3 - Article

AN - SCOPUS:85018357373

SN - 1533-4880

VL - 17

SP - 4687

EP - 4693

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 7

ER -