Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx: H films

Kyung Dong Lee, Kwang Sun Ji, Soohyun Bae, Seongtak Kim, Hyunho Kim, Jae Eun Kim, Yoon Chung Nam, Sungjin Choi, Myeong Sang Jeong, Min Gu Kang, Hee Eun Song, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

Original languageEnglish
Pages (from-to)4687-4693
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number7
DOIs
Publication statusPublished - 2017

Keywords

  • Passivation
  • Plasma-enhanced chemical vapor deposition frequency
  • Silicon nitride
  • Silicon solar cell
  • Surface damage

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Lee, K. D., Ji, K. S., Bae, S., Kim, S., Kim, H., Kim, J. E., Nam, Y. C., Choi, S., Jeong, M. S., Kang, M. G., Song, H. E., Kang, Y. M., Lee, H., & Kim, D. (2017). Effects of plasma enhanced chemical vapor deposition radio frequency on the properties of SiNx: H films. Journal of Nanoscience and Nanotechnology, 17(7), 4687-4693. https://doi.org/10.1166/jnn.2017.14272