Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching

H. H. Park, K. H. Kwon, S. H. Lee, Sahn Nahm, J. W. Lee, B. H. Koak, K. S. Suh, O. J. Kwon, J. L. Lee, G. Y. Yeom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages243-248
Number of pages6
Volume315
ISBN (Print)1558992138
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 131993 Apr 15

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93/4/1393/4/15

Fingerprint

Reactive ion etching
Silicon
Fluorine
Rutherford backscattering spectroscopy
High resolution transmission electron microscopy
Plasmas
Ions
Fluorocarbons
Point defects
Cleaning
X ray photoelectron spectroscopy
Defects
fluoroform
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Park, H. H., Kwon, K. H., Lee, S. H., Nahm, S., Lee, J. W., Koak, B. H., ... Yeom, G. Y. (1993). Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Materials Research Society Symposium Proceedings (Vol. 315, pp. 243-248). Publ by Materials Research Society.

Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. / Park, H. H.; Kwon, K. H.; Lee, S. H.; Nahm, Sahn; Lee, J. W.; Koak, B. H.; Suh, K. S.; Kwon, O. J.; Lee, J. L.; Yeom, G. Y.

Materials Research Society Symposium Proceedings. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Vol. 315 Publ by Materials Research Society, 1993. p. 243-248.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, HH, Kwon, KH, Lee, SH, Nahm, S, Lee, JW, Koak, BH, Suh, KS, Kwon, OJ, Lee, JL & Yeom, GY 1993, Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. in GS Higashi, EA Irene & T Ohmi (eds), Materials Research Society Symposium Proceedings. vol. 315, Publ by Materials Research Society, pp. 243-248, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93/4/13.
Park HH, Kwon KH, Lee SH, Nahm S, Lee JW, Koak BH et al. Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. In Higashi GS, Irene EA, Ohmi T, editors, Materials Research Society Symposium Proceedings. Vol. 315. Publ by Materials Research Society. 1993. p. 243-248
Park, H. H. ; Kwon, K. H. ; Lee, S. H. ; Nahm, Sahn ; Lee, J. W. ; Koak, B. H. ; Suh, K. S. ; Kwon, O. J. ; Lee, J. L. ; Yeom, G. Y. / Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. Materials Research Society Symposium Proceedings. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Vol. 315 Publ by Materials Research Society, 1993. pp. 243-248
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AU - Lee, J. W.

AU - Koak, B. H.

AU - Suh, K. S.

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AU - Lee, J. L.

AU - Yeom, G. Y.

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N2 - The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

AB - The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

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