Effects of postmetallization oxygen annealing on electrical properties of 25 nm thick amorphous BaSm2Ti4O12 film

Young Hun Jeong, Jong Hoo Paik, Young Jin Lee, Sahn Nahm

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2 Citations (Scopus)


The effects of postmetallization oxygen annealing on the electrical properties of a 25 nm thick amorphous Ba Sm2 Ti4 O12 (BSmT) thin film have been investigated. The radio frequency sputtered BSmT film was well-developed on a TiNSi O2 Si substrate. A BSmT film that was postmetallization-annealed at 20 Torr oxygen pressure exhibited a high capacitance density of 10.5 fFμ m2 at 100 kHz. It still showed a high capacitance density of 9.2 fFμ m2 and a high Q value of 67, even at 1.0 GHz, along with a relatively high k of 30. Its leakage current density was significantly improved to 8.9 nA cm2 at +2.0 V, and the conduction mechanism is considered to be a Poole-Frenkel mechanism. In addition, better quadratic voltage and temperature coefficients of capacitance were obtained, which were as low as approximately 169 ppm V2 and 76 ppm o C, respectively, at 100 kHz. Therefore, it is thought that the oxygen during the annealing process significantly improves the electrical properties of the BSmT films for high-performance metal-insulator-metal capacitors.

Original languageEnglish
Pages (from-to)G214-G217
JournalJournal of the Electrochemical Society
Issue number10
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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