Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane

Jin Kyung Choi, Donghwan Kim, J. Lee, Ji Beom Yoo

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The effects of various deposition parameters such as growth temperature, N2O/HMDS ratio, O2/HMDS ratio, RF power and deposition pressure on the growth characteristics and properties of thick SiO2 film using PECVD are investigated. It is found that a high growth temperature results in a low growth rate and dense films with few visible defects. Excess oxygen flow decreases the growth rate. The growth rate of SiO2 with O2 is lower than that of SiO2 with N2O. As the RF power increases, the growth rate increases and the refractive index approaches that of thermal oxide. As the deposition pressure increases, the growth rate increases first and decreases later. The thickness, etch rate, optical properties and surface roughness of SiO2 were measured using α-step, 6:1 BOE solution, ellipsometry and scanning electron microscope (SEM), respectively. (C) 2000 Elsevier Science S.A. All rights reserved.

Original languageEnglish
Pages (from-to)136-140
Number of pages5
JournalSurface and Coatings Technology
Volume131
Issue number1-3
DOIs
Publication statusPublished - 2000 Dec 1

Fingerprint

Plasma enhanced chemical vapor deposition
vapor deposition
Growth temperature
Ellipsometry
Thick films
Oxides
Refractive index
Electron microscopes
Optical properties
Surface roughness
hexamethylsilazane
Oxygen
Scanning
Defects
ellipsometry
thick films
surface roughness
roughness
electron microscopes
refractivity

Keywords

  • Growth characteristics
  • Growth parameters
  • Hexamethyldisilzane
  • Optical properties of SiO
  • Plasma enhanced chemical vapor deposition
  • SiO

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane. / Choi, Jin Kyung; Kim, Donghwan; Lee, J.; Yoo, Ji Beom.

In: Surface and Coatings Technology, Vol. 131, No. 1-3, 01.12.2000, p. 136-140.

Research output: Contribution to journalArticle

@article{b14fc53afc0e46069a3f2956a89dea11,
title = "Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane",
abstract = "The effects of various deposition parameters such as growth temperature, N2O/HMDS ratio, O2/HMDS ratio, RF power and deposition pressure on the growth characteristics and properties of thick SiO2 film using PECVD are investigated. It is found that a high growth temperature results in a low growth rate and dense films with few visible defects. Excess oxygen flow decreases the growth rate. The growth rate of SiO2 with O2 is lower than that of SiO2 with N2O. As the RF power increases, the growth rate increases and the refractive index approaches that of thermal oxide. As the deposition pressure increases, the growth rate increases first and decreases later. The thickness, etch rate, optical properties and surface roughness of SiO2 were measured using α-step, 6:1 BOE solution, ellipsometry and scanning electron microscope (SEM), respectively. (C) 2000 Elsevier Science S.A. All rights reserved.",
keywords = "Growth characteristics, Growth parameters, Hexamethyldisilzane, Optical properties of SiO, Plasma enhanced chemical vapor deposition, SiO",
author = "Choi, {Jin Kyung} and Donghwan Kim and J. Lee and Yoo, {Ji Beom}",
year = "2000",
month = "12",
day = "1",
doi = "10.1016/S0257-8972(00)00751-9",
language = "English",
volume = "131",
pages = "136--140",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane

AU - Choi, Jin Kyung

AU - Kim, Donghwan

AU - Lee, J.

AU - Yoo, Ji Beom

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The effects of various deposition parameters such as growth temperature, N2O/HMDS ratio, O2/HMDS ratio, RF power and deposition pressure on the growth characteristics and properties of thick SiO2 film using PECVD are investigated. It is found that a high growth temperature results in a low growth rate and dense films with few visible defects. Excess oxygen flow decreases the growth rate. The growth rate of SiO2 with O2 is lower than that of SiO2 with N2O. As the RF power increases, the growth rate increases and the refractive index approaches that of thermal oxide. As the deposition pressure increases, the growth rate increases first and decreases later. The thickness, etch rate, optical properties and surface roughness of SiO2 were measured using α-step, 6:1 BOE solution, ellipsometry and scanning electron microscope (SEM), respectively. (C) 2000 Elsevier Science S.A. All rights reserved.

AB - The effects of various deposition parameters such as growth temperature, N2O/HMDS ratio, O2/HMDS ratio, RF power and deposition pressure on the growth characteristics and properties of thick SiO2 film using PECVD are investigated. It is found that a high growth temperature results in a low growth rate and dense films with few visible defects. Excess oxygen flow decreases the growth rate. The growth rate of SiO2 with O2 is lower than that of SiO2 with N2O. As the RF power increases, the growth rate increases and the refractive index approaches that of thermal oxide. As the deposition pressure increases, the growth rate increases first and decreases later. The thickness, etch rate, optical properties and surface roughness of SiO2 were measured using α-step, 6:1 BOE solution, ellipsometry and scanning electron microscope (SEM), respectively. (C) 2000 Elsevier Science S.A. All rights reserved.

KW - Growth characteristics

KW - Growth parameters

KW - Hexamethyldisilzane

KW - Optical properties of SiO

KW - Plasma enhanced chemical vapor deposition

KW - SiO

UR - http://www.scopus.com/inward/record.url?scp=0034528287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034528287&partnerID=8YFLogxK

U2 - 10.1016/S0257-8972(00)00751-9

DO - 10.1016/S0257-8972(00)00751-9

M3 - Article

AN - SCOPUS:0034528287

VL - 131

SP - 136

EP - 140

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1-3

ER -