Effects of process parameters on the growth of thick SiO₂ using plasma enhanced chemical vapor deposition with hexamethyldisilazane

Chemical Compounds

• Hexamethyldisilazane 94%
• Plasma Enhanced Chemical Vapour Deposition 84%
• Pressure 40%
• Ellipsometry 38%
• Surface Roughness 35%
• Liquid Film 34%
• Refractive Index 33%
• Optical Property 25%
• Flow 22%
• Electron Particle 19%
• Oxide 19%
• Dioxygen 17%

Engineering & Materials Science

• Plasma enhanced chemical vapor deposition 100%
• Growth temperature 45%
• Ellipsometry 23%
• Refractive index 18%
• Optical properties 17%
• Electron microscopes 13%
• Oxides 12%
• Surface roughness 11%
• Oxygen 11%
• Scanning 10%
• Defects 9%
• Hot Temperature 6%

Physics & Astronomy

• vapor deposition 54%
• ellipsometry 8%
• thick films 8%
• surface roughness 7%
• electron microscopes 6%
• refractivity 6%
• optical properties 5%
• scanning 5%
• oxides 5%
• oxygen 5%
• temperature 5%