Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo, L. Liu, F. Ren, H. Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, I. I. Kravchenko

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17 Citations (Scopus)

Abstract

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

Original languageEnglish
Article number061201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number6
DOIs
Publication statusPublished - 2011 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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