Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo, L. Liu, F. Ren, H. Y. Kim, Ji Hyun Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, I. I. Kravchenko

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Abstract

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 10 11 to 2 × 10 15 cm -2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 10 15 cm -2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 10 11 to 2 × 10 15 cm -2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

Original languageEnglish
Article number061201
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume29
Issue number6
DOIs
Publication statusPublished - 2011 Nov 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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