Abstract
The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of crosssectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.
| Original language | English |
|---|---|
| Pages (from-to) | 1466-1470 |
| Number of pages | 5 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 12 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2012 Jun 5 |
Keywords
- Electrical Transport
- FIB
- Nanorod
- ZnO
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
Fingerprint Dive into the research topics of 'Effects of Pt junction on electrical transport of individual Zno nanorod device fabricated by focused ion beam'. Together they form a unique fingerprint.
Cite this
Yoon, S. W., Seo, J. H., Seong, T. Y., Kwon, H., Lee, K. B., & Ahn, J. P. (2012). Effects of Pt junction on electrical transport of individual Zno nanorod device fabricated by focused ion beam. Journal of Nanoscience and Nanotechnology, 12(2), 1466-1470. https://doi.org/10.1166/jnn.2012.4696