Abstract
The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of crosssectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.
| Original language | English |
|---|---|
| Pages (from-to) | 1466-1470 |
| Number of pages | 5 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 12 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2012 Jun 5 |
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Keywords
- Electrical Transport
- FIB
- Nanorod
- ZnO
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Science(all)
- Bioengineering
- Biomedical Engineering
Cite this
Effects of Pt junction on electrical transport of individual Zno nanorod device fabricated by focused ion beam. / Yoon, Sang Won; Seo, Jong Hyun; Seong, Tae Yeon; Kwon, Hoon; Lee, Kon Bae; Ahn, Jae Pyoung.
In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 2, 05.06.2012, p. 1466-1470.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of Pt junction on electrical transport of individual Zno nanorod device fabricated by focused ion beam
AU - Yoon, Sang Won
AU - Seo, Jong Hyun
AU - Seong, Tae Yeon
AU - Kwon, Hoon
AU - Lee, Kon Bae
AU - Ahn, Jae Pyoung
PY - 2012/6/5
Y1 - 2012/6/5
N2 - The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of crosssectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.
AB - The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of crosssectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.
KW - Electrical Transport
KW - FIB
KW - Nanorod
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84861674693&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861674693&partnerID=8YFLogxK
U2 - 10.1166/jnn.2012.4696
DO - 10.1166/jnn.2012.4696
M3 - Article
VL - 12
SP - 1466
EP - 1470
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 2
ER -