TY - JOUR
T1 - Effects of rapid thermal annealing on electrical, optical, and structural properties of Ni-doped In2O3 anodes for bulk heterojunction organic solar cells
AU - Ho Kim, Jun
AU - Seong, Tae Yeon
AU - Kim, Han Ki
N1 - Funding Information:
This work was supported by the New & Renewable Energy of Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant No. (2011T100200034) funded by the Korea government Ministry of Knowledge Economy.
PY - 2013/3
Y1 - 2013/3
N2 - The authors investigated the effects of rapid thermal annealing (RTA) on the electrical, optical, and structural properties, and work functions of Ni-doped In2O3 (INO) anodes prepared by a DC/RF co-sputtering process for use in bulk heterojunction organic solar cells (OSCs). By RTA processing at 600 °C, the authors obtained the optimized INO anodes with a sheet resistance of 28 Ω/sq, an optical transmittance of 82.93%, and a work function of 5.02 eV, which are acceptable in OSC fabrication. In particular, the 600 °C annealed INO anode showed much higher optical transmittance in the near infrared wavelength region than the conventional ITO film, even though it had a low resistivity of 5.66 × 10-4 Ω cm. The OSC fabricated on the annealed INO anode showed a higher power convention efficiency of 2.65% than the OSC with as-deposited INO anodes (2.19%) because the fill factors of the OSC are critically dependent on the sheet resistance of the anode.
AB - The authors investigated the effects of rapid thermal annealing (RTA) on the electrical, optical, and structural properties, and work functions of Ni-doped In2O3 (INO) anodes prepared by a DC/RF co-sputtering process for use in bulk heterojunction organic solar cells (OSCs). By RTA processing at 600 °C, the authors obtained the optimized INO anodes with a sheet resistance of 28 Ω/sq, an optical transmittance of 82.93%, and a work function of 5.02 eV, which are acceptable in OSC fabrication. In particular, the 600 °C annealed INO anode showed much higher optical transmittance in the near infrared wavelength region than the conventional ITO film, even though it had a low resistivity of 5.66 × 10-4 Ω cm. The OSC fabricated on the annealed INO anode showed a higher power convention efficiency of 2.65% than the OSC with as-deposited INO anodes (2.19%) because the fill factors of the OSC are critically dependent on the sheet resistance of the anode.
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U2 - 10.1116/1.4774212
DO - 10.1116/1.4774212
M3 - Article
AN - SCOPUS:84874627316
VL - 31
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 2
M1 - 021201
ER -