Abstract
N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 731-734 |
| Number of pages | 4 |
| Journal | Metals and Materials International |
| Volume | 18 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 Aug |
Keywords
- Aluminium rear emitter
- Junction properties
- Rapid thermal process
- Si solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys
- Materials Chemistry
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Cite this
Park, S., Kim, Y. D., Bae, S., Kim, S., Song, J., Kim, H., Park, H. M., Kim, S., Tark, S. J., & Kim, D. (2012). Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells. Metals and Materials International, 18(4), 731-734. https://doi.org/10.1007/s12540-012-4022-y