Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

Sungeun Park; Young Do Kim; Soohyun Bae; Seongtak Kim; Jooyong Song; Hyunho Kim; Hyo Min Park; Soomin Kim; Sung Ju Tark; Donghwan Kim

doi:10.1007/s12540-012-4022-y

Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

Sungeun Park, Young Do Kim, Soohyun Bae, Seongtak Kim, Jooyong Song, Hyunho Kim, Hyo Min Park, Soomin Kim, Sung Ju Tark, Donghwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.

Original language	English
Pages (from-to)	731-734
Number of pages	4
Journal	Metals and Materials International
Volume	18
Issue number	4
DOIs	https://doi.org/10.1007/s12540-012-4022-y
Publication status	Published - 2012 Aug

Keywords

Aluminium rear emitter
Junction properties
Rapid thermal process
Si solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

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10.1007/s12540-012-4022-y

Cite this

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title = "Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells",

abstract = "N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.",

keywords = "Aluminium rear emitter, Junction properties, Rapid thermal process, Si solar cells",

author = "Sungeun Park and Kim, {Young Do} and Soohyun Bae and Seongtak Kim and Jooyong Song and Hyunho Kim and Park, {Hyo Min} and Soomin Kim and Tark, {Sung Ju} and Donghwan Kim",

note = "Funding Information: This work was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640), and this work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093021010010).",

year = "2012",

month = aug,

doi = "10.1007/s12540-012-4022-y",

language = "English",

volume = "18",

pages = "731--734",

journal = "Metals and Materials International",

issn = "1598-9623",

publisher = "Korean Institute of Metals and Materials",

number = "4",

}

TY - JOUR

T1 - Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

AU - Park, Sungeun

AU - Kim, Young Do

AU - Bae, Soohyun

AU - Kim, Seongtak

AU - Song, Jooyong

AU - Kim, Hyunho

AU - Park, Hyo Min

AU - Kim, Soomin

AU - Tark, Sung Ju

AU - Kim, Donghwan

N1 - Funding Information: This work was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640), and this work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093021010010).

PY - 2012/8

Y1 - 2012/8

N2 - N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.

AB - N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.

KW - Aluminium rear emitter

KW - Junction properties

KW - Rapid thermal process

KW - Si solar cells

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U2 - 10.1007/s12540-012-4022-y

DO - 10.1007/s12540-012-4022-y

M3 - Article

AN - SCOPUS:84869178377

VL - 18

SP - 731

EP - 734

JO - Metals and Materials International

JF - Metals and Materials International

SN - 1598-9623

IS - 4

ER -

Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

Abstract

Keywords

ASJC Scopus subject areas

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