Abstract
N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.
Original language | English |
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Pages (from-to) | 731-734 |
Number of pages | 4 |
Journal | Metals and Materials International |
Volume | 18 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 Aug |
Keywords
- Aluminium rear emitter
- Junction properties
- Rapid thermal process
- Si solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys
- Materials Chemistry