Abstract
The low temperature (100 °C) deposition of Sc2O3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5 × 100 μm2 HEMTs for both types of oxide passivation layers. Both Sc2O3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiNx passivation which typically showed ≤ dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc2O3 or MgO passivation. These films appear promising for reducing the effects of surface states on the dc and rf performance of AlGaN/GaN HEMTs.
Original language | English |
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Pages (from-to) | 505-507 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 23 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2002 Sep |
Externally published | Yes |
Keywords
- GaN
- MODFETs
- Passivation
- Surface states
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering