Effects of semiconductor processing chemicals on conductivity of graphene

Chung Wei Chen, F. Ren, Gou Chung Chi, S. C. Hung, Y. P. Huang, Ji Hyun Kim, Ivan Kravchenko, Stephen J. Pearton

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Graphene layers on SiO 2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H 2O, and O 2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals.

Original languageEnglish
Article number040602
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number4
DOIs
Publication statusPublished - 2012 Jul 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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