Effects of semiconductor processing chemicals on conductivity of graphene

Chung Wei Chen; F. Ren; Gou Chung Chi; S. C. Hung; Y. P. Huang; Jihyun Kim; Ivan Kravchenko; Stephen J. Pearton

doi:10.1116/1.4732517

Effects of semiconductor processing chemicals on conductivity of graphene

Chung Wei Chen, F. Ren, Gou Chung Chi, S. C. Hung, Y. P. Huang, Jihyun Kim, Ivan Kravchenko, Stephen J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Graphene layers on SiO₂/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H₂O, and O₂ plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals.

Original language	English
Article number	040602
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4732517
Publication status	Published - 2012 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4732517

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title = "Effects of semiconductor processing chemicals on conductivity of graphene",

abstract = "Graphene layers on SiO2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H2O, and O2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals.",

author = "Chen, {Chung Wei} and F. Ren and Chi, {Gou Chung} and Hung, {S. C.} and Huang, {Y. P.} and Jihyun Kim and Ivan Kravchenko and Pearton, {Stephen J.}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Grant No. NSC 100-2112-M-009-018 and by NSF (J. M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.",

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AU - Ren, F.

AU - Chi, Gou Chung

AU - Hung, S. C.

AU - Huang, Y. P.

AU - Kim, Jihyun

AU - Kravchenko, Ivan

AU - Pearton, Stephen J.

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Grant No. NSC 100-2112-M-009-018 and by NSF (J. M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

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Effects of semiconductor processing chemicals on conductivity of graphene

Abstract

ASJC Scopus subject areas

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