Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Dae Young Jeon, Do Kywn Kim, So Jeong Park, Yumin Koh, Chu Young Cho, Gyu-Tae Kim, Kyung Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.

Original languageEnglish
Pages (from-to)40-44
Number of pages5
JournalMicroelectronic Engineering
Volume199
DOIs
Publication statusPublished - 2018 Nov 5

Keywords

  • AlGaN/GaN HEMTs
  • Effective mobility
  • Low-frequency noise and carrier number fluctuation model
  • Mobility degradation factors
  • Series resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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