Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Dae Young Jeon; Do Kywn Kim; So Jeong Park; Yumin Koh; Chu Young Cho; Gyu Tae Kim; Kyung Ho Park

doi:10.1016/j.mee.2018.07.010

Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Dae Young Jeon, Do Kywn Kim, So Jeong Park, Yumin Koh, Chu Young Cho, Gyu Tae Kim, Kyung Ho Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.

Original language	English
Pages (from-to)	40-44
Number of pages	5
Journal	Microelectronic Engineering
Volume	199
DOIs	https://doi.org/10.1016/j.mee.2018.07.010
Publication status	Published - 2018 Nov 5

Keywords

AlGaN/GaN HEMTs
Effective mobility
Low-frequency noise and carrier number fluctuation model
Mobility degradation factors
Series resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors",

abstract = "The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.",

keywords = "AlGaN/GaN HEMTs, Effective mobility, Low-frequency noise and carrier number fluctuation model, Mobility degradation factors, Series resistance",

author = "Jeon, {Dae Young} and Kim, {Do Kywn} and Park, {So Jeong} and Yumin Koh and Cho, {Chu Young} and Kim, {Gyu Tae} and Park, {Kyung Ho}",

note = "Funding Information: This work was supported by the Korea Institute of Science and Technology (KIST) Institutional Program, the National Research Foundation of Korea ( NRF-2017M3A7B4049167 and NRF-2016R1A6A3A11933511 ), the Nano∙Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT and Future Planning ( 2015M3A7B7044548 ), the Future Semiconductor Device Technology Development Program ( 10067739 ) funded by Ministry of Trade, Industry and Energy (MOTIE), the Korea Semiconductor Research Consortium (KSRC) and a Korea University Grant. Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = nov,

day = "5",

doi = "10.1016/j.mee.2018.07.010",

language = "English",

volume = "199",

pages = "40--44",

journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

AU - Jeon, Dae Young

AU - Kim, Do Kywn

AU - Park, So Jeong

AU - Koh, Yumin

AU - Cho, Chu Young

AU - Kim, Gyu Tae

AU - Park, Kyung Ho

N1 - Funding Information: This work was supported by the Korea Institute of Science and Technology (KIST) Institutional Program, the National Research Foundation of Korea ( NRF-2017M3A7B4049167 and NRF-2016R1A6A3A11933511 ), the Nano∙Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT and Future Planning ( 2015M3A7B7044548 ), the Future Semiconductor Device Technology Development Program ( 10067739 ) funded by Ministry of Trade, Industry and Energy (MOTIE), the Korea Semiconductor Research Consortium (KSRC) and a Korea University Grant. Publisher Copyright: © 2018 Elsevier B.V.

PY - 2018/11/5

Y1 - 2018/11/5

N2 - The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.

AB - The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.

KW - AlGaN/GaN HEMTs

KW - Effective mobility

KW - Low-frequency noise and carrier number fluctuation model

KW - Mobility degradation factors

KW - Series resistance

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

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Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Abstract

Keywords

ASJC Scopus subject areas

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