Effects of Si doping on ordering and domain structures in GaInP

Sang Moon Lee; Tae Yeon Seong; R. T. Lee; G. B. Stringfellow

doi:10.1016/S0169-4332(00)00020-9

Effects of Si doping on ordering and domain structures in GaInP

Sang Moon Lee, Tae Yeon Seong, R. T. Lee, G. B. Stringfellow

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of Si doping on ordering and domain structures in GaInP grown by organometallic vapour phase epitaxy on (001) GaAs singular and vicinal substrates at 620°C have been investigated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that the behaviour of antiphase boundaries (APBs) in the singular samples differs from that of the vicinal samples. As the carrier concentration increases, the density of APBs in the vicinal samples increases slightly, whilst that of the singular samples varies insignificantly. APBs are inclined some degrees from the growth surface. TEM results show that for the highly doped samples, the ordered domains contain dark mottled contrast corresponding to either much less ordered regions or disordered regions. TED results show that the ordering is present in layers exceeding a concentration of approx. 2.0 × 10¹⁸ cm^-3.

Original language	English
Pages (from-to)	223-228
Number of pages	6
Journal	Applied Surface Science
Volume	158
Issue number	3
DOIs	https://doi.org/10.1016/S0169-4332(00)00020-9
Publication status	Published - 2000 May
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(00)00020-9

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title = "Effects of Si doping on ordering and domain structures in GaInP",

abstract = "The effects of Si doping on ordering and domain structures in GaInP grown by organometallic vapour phase epitaxy on (001) GaAs singular and vicinal substrates at 620°C have been investigated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that the behaviour of antiphase boundaries (APBs) in the singular samples differs from that of the vicinal samples. As the carrier concentration increases, the density of APBs in the vicinal samples increases slightly, whilst that of the singular samples varies insignificantly. APBs are inclined some degrees from the growth surface. TEM results show that for the highly doped samples, the ordered domains contain dark mottled contrast corresponding to either much less ordered regions or disordered regions. TED results show that the ordering is present in layers exceeding a concentration of approx. 2.0 × 1018 cm-3.",

author = "Lee, {Sang Moon} and Seong, {Tae Yeon} and Lee, {R. T.} and Stringfellow, {G. B.}",

note = "Funding Information: The authors wish to thank MOST (Korea) for financial support. One author (GBS) wishes to thank the Department of Energy for partial support of his work.",

year = "2000",

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doi = "10.1016/S0169-4332(00)00020-9",

language = "English",

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pages = "223--228",

journal = "Applied Surface Science",

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T1 - Effects of Si doping on ordering and domain structures in GaInP

AU - Lee, Sang Moon

AU - Seong, Tae Yeon

AU - Lee, R. T.

AU - Stringfellow, G. B.

N1 - Funding Information: The authors wish to thank MOST (Korea) for financial support. One author (GBS) wishes to thank the Department of Energy for partial support of his work.

PY - 2000/5

Y1 - 2000/5

N2 - The effects of Si doping on ordering and domain structures in GaInP grown by organometallic vapour phase epitaxy on (001) GaAs singular and vicinal substrates at 620°C have been investigated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that the behaviour of antiphase boundaries (APBs) in the singular samples differs from that of the vicinal samples. As the carrier concentration increases, the density of APBs in the vicinal samples increases slightly, whilst that of the singular samples varies insignificantly. APBs are inclined some degrees from the growth surface. TEM results show that for the highly doped samples, the ordered domains contain dark mottled contrast corresponding to either much less ordered regions or disordered regions. TED results show that the ordering is present in layers exceeding a concentration of approx. 2.0 × 1018 cm-3.

AB - The effects of Si doping on ordering and domain structures in GaInP grown by organometallic vapour phase epitaxy on (001) GaAs singular and vicinal substrates at 620°C have been investigated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that the behaviour of antiphase boundaries (APBs) in the singular samples differs from that of the vicinal samples. As the carrier concentration increases, the density of APBs in the vicinal samples increases slightly, whilst that of the singular samples varies insignificantly. APBs are inclined some degrees from the growth surface. TEM results show that for the highly doped samples, the ordered domains contain dark mottled contrast corresponding to either much less ordered regions or disordered regions. TED results show that the ordering is present in layers exceeding a concentration of approx. 2.0 × 1018 cm-3.

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U2 - 10.1016/S0169-4332(00)00020-9

DO - 10.1016/S0169-4332(00)00020-9

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SN - 0169-4332

VL - 158

SP - 223

EP - 228

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3

ER -

Effects of Si doping on ordering and domain structures in GaInP

Abstract

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