Effects of Si doping on ordering and domain structures in GaInP

Sang Moon Lee, Tae Yeon Seong, R. T. Lee, G. B. Stringfellow

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of Si doping on ordering and domain structures in GaInP grown by organometallic vapour phase epitaxy on (001) GaAs singular and vicinal substrates at 620°C have been investigated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that the behaviour of antiphase boundaries (APBs) in the singular samples differs from that of the vicinal samples. As the carrier concentration increases, the density of APBs in the vicinal samples increases slightly, whilst that of the singular samples varies insignificantly. APBs are inclined some degrees from the growth surface. TEM results show that for the highly doped samples, the ordered domains contain dark mottled contrast corresponding to either much less ordered regions or disordered regions. TED results show that the ordering is present in layers exceeding a concentration of approx. 2.0 × 1018 cm-3.

Original languageEnglish
Pages (from-to)223-228
Number of pages6
JournalApplied Surface Science
Volume158
Issue number3
DOIs
Publication statusPublished - 2000 May

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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