TY - JOUR
T1 - Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires
AU - Kim, Kyoungwon
AU - Debnath, Pulak Chandra
AU - Lee, Deuk Hee
AU - Kim, Sangsig
AU - Lee, Sang Yeol
N1 - Funding Information:
This research was supported by a grant (code #: 2011K000208) from “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Education, Science and Technology, Korea.
PY - 2011
Y1 - 2011
N2 - 1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed laser deposition. After silver-doping process, SZO NWs show some change behaviors, including structural, electrical, and optical properties. In case of structural property, the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the electrical properties of SZO NWs are variously measured to be about 4.26 × 10 6, 1.34 × 10 6, and 3.04 × 10 5 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A 0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice.
AB - 1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed laser deposition. After silver-doping process, SZO NWs show some change behaviors, including structural, electrical, and optical properties. In case of structural property, the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the electrical properties of SZO NWs are variously measured to be about 4.26 × 10 6, 1.34 × 10 6, and 3.04 × 10 5 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A 0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice.
UR - http://www.scopus.com/inward/record.url?scp=84862943505&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-6-552
DO - 10.1186/1556-276X-6-552
M3 - Article
C2 - 21985620
AN - SCOPUS:84862943505
SN - 1931-7573
VL - 6
SP - 1
EP - 8
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
M1 - 552
ER -