The etched features of the thin Chromium (Cr) films deposited on SiO2-Si substrate were investigated as a function of substrate temperature during rf-sputtering deposition. In this work, the changes of both the grain structures and crystallographic orientations of sputtered Cr-films as a function of substrate temperature were examined by Scanning Electron Microscopy (SEM) and X-Ray Diffraction spectroscopy (XRD). In these measurements, we found that the tapering angle (θt) of thin Cr-film after reactive ion etching depends on the deposition condition, especially, substrate temperature during rf-sputtering process. Based on the obtained results, we formed the two kinds of Cr-gated Mo-tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs. θt ≤ 90°) and another is a FEAs with tapering-free gate electrode (non-tapering gated FEAs, θt = 90°), compared the electron emission characteristics for this two kinds of FEAs. In the case of non-tapering gated FEAs, we obtain the more emission current than that of tapering gated FEAs while the gate leakage current of non-tapering gated FEAs was almost same value compared to that of tapering gated FEAs. Through the optimized the etched shape of gated electrode, the total transconductance (Gm) of FEAs was increased without over-coating on tip as well as increase the packing density of FEAs.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. Part 1|
|Publication status||Published - 2001 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)