Effects of substrate temperature on the electrical and the optical properties of n-type ZnO/p-type 4H-SiC

Ji Chul Jung, Ji Hong Kim, Kang Min Do, Byung Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increased from ∼760 Ω/square to ∼4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination have also been studied.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages1327-1330
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Keywords

  • N-type ZnO
  • P-type 4H-SiC
  • Substrate temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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