Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution

June O. Song, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We investigate the effect of CH3CSNH2 solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×1018cm -3). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I-V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700°C) results in a specific contact resistance of 3.1×10-6cm2. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I-V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed.

Original languageEnglish
Pages (from-to)3129-3131
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number17
DOIs
Publication statusPublished - 2002 Apr 29
Externally publishedYes

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passivity
sulfides
electric contacts
sulfur
contact resistance
photoelectric emission
annealing
spectroscopy
x rays
binding energy
photoluminescence
shift
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution. / Song, June O.; Park, Seong Ju; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 80, No. 17, 29.04.2002, p. 3129-3131.

Research output: Contribution to journalArticle

@article{8d443cb96e334377a5907a0221bbadbe,
title = "Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution",
abstract = "We investigate the effect of CH3CSNH2 solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×1018cm -3). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I-V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700°C) results in a specific contact resistance of 3.1×10-6cm2. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I-V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed.",
author = "Song, {June O.} and Park, {Seong Ju} and Seong, {Tae Yeon}",
year = "2002",
month = "4",
day = "29",
doi = "10.1063/1.1475773",
language = "English",
volume = "80",
pages = "3129--3131",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution

AU - Song, June O.

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2002/4/29

Y1 - 2002/4/29

N2 - We investigate the effect of CH3CSNH2 solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×1018cm -3). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I-V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700°C) results in a specific contact resistance of 3.1×10-6cm2. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I-V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed.

AB - We investigate the effect of CH3CSNH2 solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×1018cm -3). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I-V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700°C) results in a specific contact resistance of 3.1×10-6cm2. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I-V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed.

UR - http://www.scopus.com/inward/record.url?scp=79956000887&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956000887&partnerID=8YFLogxK

U2 - 10.1063/1.1475773

DO - 10.1063/1.1475773

M3 - Article

AN - SCOPUS:79956000887

VL - 80

SP - 3129

EP - 3131

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -