In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm2/Vs at 77 K and 25,870 cm 2/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.
|Number of pages||6|
|Journal||Journal of the Korean Physical Society|
|Issue number||5 PART 1|
|Publication status||Published - 2008 Nov 1|
- Molecular beam epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)