Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures

S. H. Shin, J. Y. Lim, J. D. Song, H. J. Kim, S. H. Han, Tae Geun Kim

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Abstract

In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional- electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized ∼11-nm-thick InAs/AlSb HEMT on AlSb (0.5 μm)/10 repetition of GaSb/AlSb superlattices/AlSb (1 μm) shows noticeable values of the electron mobility (∼106,900 cm2/Vs at 77 K and 25,870 cm 2/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.

Original languageEnglish
Pages (from-to)2719-2724
Number of pages6
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 1
Publication statusPublished - 2008 Nov 1

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Keywords

  • 2-DEG
  • AlSb
  • HEMT
  • InAs
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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