Effects of the linewidth enhancement factor on filamentation in 1.55 μm broad-area laser diodes

Du Chang Heo, Il K. Han, Jung I. Lee, Jichai Jeong, Si Hyung Cho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Broad-area laser diodes with different linewidth enhancement factors (α-factors ) of 2 and 4 have been fabricated on 1.55 μm multi-quantum well structures. Far-field measurements show that the filamentation of the laser diodes is closely related to the α-factor. The full width at half maximum (FWHM) of the far-fields and the filamentation were reduced in the laser diodes with smaller α-factors. As the injection current increased, the FWHM of the far-fields also increased regardless of the value of the α-factor. This phenomenon is explained by the reduction of the filament spacing as the injection current increased. A qualitative explanation of filamentation mechanisms is given by introducing the notion of sub-aperture.

Original languageEnglish
Pages (from-to)486-490
Number of pages5
JournalSemiconductor Science and Technology
Volume18
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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