Effects of the phosphorus doping level and excess silicon on the oxidation of tungsten polycide

Hoi Hwan Chung, Jong Hyun Lee, Byeong Kwon Ju, Young Cho Kim, Kwan Soo Chung

Research output: Contribution to journalArticle

Abstract

A tungsten silicide film was deposited by low pressure chemical-vapor deposition (LPCVD) onto phosphorus (P)-doped polysilicon/SiO2/Si substrates. The tungsten polycide films were annealed in a nitrogen ambient at 850°C for 20 min prior to oxidation. The kinetics of the thermal oxide growth of the annealed tungsten polycide (WSi2.5/P-doped polysilicon) films were studied as a function of the phosphorus doping level in the polysilicon and as a function of the excess silicon in the tungsten silicide. The activation energy for a linear rate constant (B/A) for tungsten polycide oxidation increased with increasing phosphorus doping in the polysilicon layer, while it was almost independent of the doping level for a parabolic rate constant (B). The excess Si from within the tungsten silicide (WSi2.5) film was consumed during the oxidation at first; then, the underlying polysilicon provided the necessary Si for further oxidation. The excess Si in the tungsten silicide enhanced the oxidation.

Original languageEnglish
Pages (from-to)658-663
Number of pages6
JournalJournal of the Korean Physical Society
Volume29
Issue number5
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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