Effects of the shape anisotropy on the giant magnetoresistance properties

K. Y. Kim, S. H. Lim, G. S. Park, M. H. Blamire, J. E. Evetts

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

For the application of giant magnetoresistance (GMR) devices such as magnetic recording head or magnetic field sensors, spin valves are patterned on micron scales. In an attempt to understand shape anisotropy effect and switching behaviors of patterned structure, we measured GMR responses of patterned stripes with different aspect ratios and angular dependence of GMR responses with respect to the applied field angles. In case of lower aspect ratio (20:6), MR ratio decreased gradually with the increase in angle between applied field and pinning direction. In case of high aspect ratio (20:2), MR ratio did not decrease up to a certain angle, after that down to the lower value rapidly. In addition, there is increase in coercivities of free and pinned layers, which is due to the shape anisotropy with respect to the high aspect ratio. This trend agrees well with the simulated GMR curves using single domain model where we consider on self-demagnetization and interlayer magnetostatic coupling effects.

Original languageEnglish
Pages (from-to)3332-3335
Number of pages4
JournalIEEE Transactions on Magnetics
Volume37
Issue number5 I
DOIs
Publication statusPublished - 2001 Sep
Externally publishedYes
EventNinth Biennial Electromagnetic Field Computation (CEFC) - Milwaukee, WI, United States
Duration: 2001 Jun 42001 Jun 7

Keywords

  • Magnetic sensor
  • Shape anisotropy
  • Single domain model
  • Spin valve

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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