Effects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer

Jeong Hoon Oh, Yun Hi Lee, Byeong Kwon Ju, Chang Yub Park, D. K. Shin, Myung Hwan Oh

Research output: Contribution to conferencePaper

Abstract

The dielectric reliability of the multilayered BaTiO3 thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO3 thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.

Original languageEnglish
Pages1026-1029
Number of pages4
Publication statusPublished - 1997
EventProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea
Duration: 1997 May 251997 May 30

Other

OtherProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
CitySeoul, Korea
Period97/5/2597/5/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

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    Oh, J. H., Lee, Y. H., Ju, B. K., Park, C. Y., Shin, D. K., & Oh, M. H. (1997). Effects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer. 1026-1029. Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, .