Effects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer

Jeong Hoon Oh; Yun-Hi Lee; Byeong Kwon Ju; Chang Yub Park; D. K. Shin; Myung Hwan Oh

Effects of the thickness on the dielectric reliability of multilayered BaTiO₃ insulating layer

Jeong Hoon Oh, Yun-Hi Lee, Byeong Kwon Ju, Chang Yub Park, D. K. Shin, Myung Hwan Oh

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

The dielectric reliability of the multilayered BaTiO₃ thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO₃ thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.

Original language	English
Pages	1026-1029
Number of pages	4
Publication status	Published - 1997
Event	Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea Duration: 1997 May 25 → 1997 May 30

Other

Other	Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
City	Seoul, Korea
Period	97/5/25 → 97/5/30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry

Cite this

Effects of the thickness on the dielectric reliability of multilayered BaTiO₃ insulating layer. / Oh, Jeong Hoon; Lee, Yun-Hi; Ju, Byeong Kwon et al.

1997. 1026-1029 Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea.

Research output: Contribution to conference › Paper › peer-review

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title = "Effects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer",

abstract = "The dielectric reliability of the multilayered BaTiO3 thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO3 thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.",

author = "Oh, {Jeong Hoon} and Yun-Hi Lee and Ju, {Byeong Kwon} and Park, {Chang Yub} and Shin, {D. K.} and Oh, {Myung Hwan}",

year = "1997",

language = "English",

pages = "1026--1029",

note = "Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) ; Conference date: 25-05-1997 Through 30-05-1997",

}

TY - CONF

T1 - Effects of the thickness on the dielectric reliability of multilayered BaTiO3 insulating layer

AU - Oh, Jeong Hoon

AU - Lee, Yun-Hi

AU - Ju, Byeong Kwon

AU - Park, Chang Yub

AU - Shin, D. K.

AU - Oh, Myung Hwan

PY - 1997

Y1 - 1997

N2 - The dielectric reliability of the multilayered BaTiO3 thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO3 thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.

AB - The dielectric reliability of the multilayered BaTiO3 thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO3 thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.

UR - http://www.scopus.com/inward/record.url?scp=0030706898&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030706898

SP - 1026

EP - 1029

T2 - Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)

Y2 - 25 May 1997 through 30 May 1997

ER -

Effects of the thickness on the dielectric reliability of multilayered BaTiO₃ insulating layer

Abstract

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ASJC Scopus subject areas

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