Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells

Yong Tae Moon, Dong Joon Kim, Keun Man Song, Chel Jong Choi, Sang Heon Han, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

The effects of indium segregation and hydrogen on the optical and structural properties of InGaN/GaN multiple quantum wells, grown by metalorganic chemical vapor deposition were investigated. Photoluminescence and high-resolution transmission electron microscopy analysis showed that two types of indium-rich regions can be formed in the InGaN well layers. Self-assembled quantum dot-like indium-rich regions were found in the well layer grown at a normal growth temperature. These regions behaved as luminescent centers, showing a maximum indium content at the center of indium-rich region. However, randomly-distributed indium-segregated regions, which formed near the upper interface of the InGaN well layers during the subsequent high-temperature annealing process led to the degradation of the optical properties by generating defects such as misfit dislocations. The use of hydrogen during the growth interruption was found to be very effective in suppressing the formation of indium-segregated regions in the InGaN well layers.

Original languageEnglish
Pages (from-to)6514-6518
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number11 I
DOIs
Publication statusPublished - 2001 Jun

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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