Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers

Tae Yeon Seong, Joon Hyung Kim, Y. S. Chun, G. B. Stringfellow

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Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates at 670°C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena.

Original languageEnglish
Pages (from-to)3137-3139
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
Publication statusPublished - 1997 Jun 9
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Seong, T. Y., Kim, J. H., Chun, Y. S., & Stringfellow, G. B. (1997). Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers. Applied Physics Letters, 70(23), 3137-3139.