Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films

J. H. Ko, I. H. Kim, Donghwan Kim, K. S. Lee, T. S. Lee, J. H. Jeong, B. Cheong, Y. J. Baik, W. M. Kim

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Amorphous Zn-Sn-O (ZTO) thin films with relative Zn contents (= [at.% Zn]/([at.% Zn] + [at.% Sn])) of 0, 0.08 and 0.27 were fabricated by co-sputtering of SnO2 and ZnO targets at room temperature. Changes in structural, electrical and optical properties together with electron transport properties were examined upon post-annealing treatment in the temperature range from 200 to 600 °C in vacuum and in air. Characterization by XRD showed that an amorphous ZTO thin film crystallized at higher temperatures with increasing Zn content. Crystallized ZTO films with a relative Zn content of 0.27 might not contain a single SnO2 phase which is observed in the films of the other compositions. Amorphous ZTO films showed decreasing electrical resistivities with increasing annealing temperature, having a minimum value of 1 × 10- 3 Ω cm. Upon crystallization, the resistivities increased drastically, which was attributed to poor crystallinity of the crystallized films. All the ZTO films were found to be degenerate semiconductors with non-parabolic conduction bands having effective masses varying from 0.15 to 0.3 in the carrier concentration range of 6 × 10 18 to 2 × 1020 cm- 3. As for a ZTO film with a relative Zn content of 0.27, the degree of non-parabolicity was much lower compared with films of the other compositions, leading to a relatively stable mobility over a wide range of carrier concentration.

Original languageEnglish
Pages (from-to)42-46
Number of pages5
JournalThin Solid Films
Volume494
Issue number1-2
DOIs
Publication statusPublished - 2006 Jan 3

Fingerprint

Amorphous films
Structural properties
Electric properties
electrical properties
Thin films
thin films
Carrier concentration
Annealing
Electron transport properties
Temperature
electrical resistivity
annealing
Crystallization
Conduction bands
Chemical analysis
Sputtering
Optical properties
crystallinity
Vacuum
conduction bands

Keywords

  • Sputtering
  • TCO
  • Transparent conducting oxide
  • Zinc stannate

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films. / Ko, J. H.; Kim, I. H.; Kim, Donghwan; Lee, K. S.; Lee, T. S.; Jeong, J. H.; Cheong, B.; Baik, Y. J.; Kim, W. M.

In: Thin Solid Films, Vol. 494, No. 1-2, 03.01.2006, p. 42-46.

Research output: Contribution to journalArticle

Ko, JH, Kim, IH, Kim, D, Lee, KS, Lee, TS, Jeong, JH, Cheong, B, Baik, YJ & Kim, WM 2006, 'Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films', Thin Solid Films, vol. 494, no. 1-2, pp. 42-46. https://doi.org/10.1016/j.tsf.2005.07.195
Ko, J. H. ; Kim, I. H. ; Kim, Donghwan ; Lee, K. S. ; Lee, T. S. ; Jeong, J. H. ; Cheong, B. ; Baik, Y. J. ; Kim, W. M. / Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films. In: Thin Solid Films. 2006 ; Vol. 494, No. 1-2. pp. 42-46.
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