Effects of ZnO thin film surface structure on nanowires grown by MOCVD

A. Young Kim, Samseok Jang, Do Han Lee, So Young Yim, Dong Jin Byun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zinc oxide (ZnO) nanowires (NWs) were grown on ZnO thin films by chemical vapor deposition (CVD) at 600 °C. The ZnO thin films were prepared by metal-organic chemical vapor deposition (MOCVD) at substrate temperatures of 400 - 700 °C at 4 Torr. High-resolution X-ray diffraction measurements showed that the ZnO thin film had a wurtzite structure, with better crystal quality when prepared at higher temperature. The ZnO thin film on sapphire had a uniform 0.1 μm thickness and root-mean-square roughness of 4 - 7 nm in 1 × 1 μm2 areas determined by field-emission scanning electron microscopy and atomic force microscopy, respectively.

Original languageEnglish
Title of host publicationICCM International Conferences on Composite Materials
Publication statusPublished - 2011 Dec 1
Event18th International Conference on Composites Materials, ICCM 2011 - Jeju, Korea, Republic of
Duration: 2011 Aug 212011 Aug 26

Other

Other18th International Conference on Composites Materials, ICCM 2011
CountryKorea, Republic of
CityJeju
Period11/8/2111/8/26

Keywords

  • Metal organic chemical vapor deposition (MOCVD)
  • Nanowire
  • Thin film
  • ZnO

ASJC Scopus subject areas

  • Engineering(all)
  • Ceramics and Composites

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