Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer

Sun Kyung Kim, Hyun Kyong Cho, Duk Kyu Bae, Jeong Soo Lee, Hong Gyu Park, Yong Hee Lee

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We demonstrate the enhancement of light extraction from a wide-area (500×500 μm2) GaN slab light-emitting diode (LED) that results from covering it with a TiO2 -patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substrate with a laser lift-off process. At the standard current of 60 mA, the wall-plug efficiency of the TiO2 -patterned LED is ∼14.8%, i.e., the efficiency is enhanced by a factor of ∼1.8 over that of nonpatterned LEDs. Our three-dimensional finite-difference time-domain computations confirm that this output increases with the index of the patterned layer.

Original languageEnglish
Article number241118
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2008 Jun 30


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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