Abstract
We demonstrate the enhancement of light extraction from a wide-area (500×500 μm2) GaN slab light-emitting diode (LED) that results from covering it with a TiO2 -patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substrate with a laser lift-off process. At the standard current of 60 mA, the wall-plug efficiency of the TiO2 -patterned LED is ∼14.8%, i.e., the efficiency is enhanced by a factor of ∼1.8 over that of nonpatterned LEDs. Our three-dimensional finite-difference time-domain computations confirm that this output increases with the index of the patterned layer.
| Original language | English |
|---|---|
| Article number | 241118 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Kim, S. K., Cho, H. K., Bae, D. K., Lee, J. S., Park, H. G., & Lee, Y. H. (2008). Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer. Applied Physics Letters, 92(24), [241118]. https://doi.org/10.1063/1.2945892