Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer

Sun Kyung Kim; Hyun Kyong Cho; Duk Kyu Bae; Jeong Soo Lee; Hong Gyu Park; Yong Hee Lee

doi:10.1063/1.2945892

Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer

Sun Kyung Kim, Hyun Kyong Cho, Duk Kyu Bae, Jeong Soo Lee, Hong Gyu Park, Yong Hee Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We demonstrate the enhancement of light extraction from a wide-area (500×500 μm²) GaN slab light-emitting diode (LED) that results from covering it with a TiO₂ -patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substrate with a laser lift-off process. At the standard current of 60 mA, the wall-plug efficiency of the TiO₂ -patterned LED is ∼14.8%, i.e., the efficiency is enhanced by a factor of ∼1.8 over that of nonpatterned LEDs. Our three-dimensional finite-difference time-domain computations confirm that this output increases with the index of the patterned layer.

Original language	English
Article number	241118
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2945892
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2945892

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abstract = "We demonstrate the enhancement of light extraction from a wide-area (500×500 μm2) GaN slab light-emitting diode (LED) that results from covering it with a TiO2 -patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substrate with a laser lift-off process. At the standard current of 60 mA, the wall-plug efficiency of the TiO2 -patterned LED is ∼14.8%, i.e., the efficiency is enhanced by a factor of ∼1.8 over that of nonpatterned LEDs. Our three-dimensional finite-difference time-domain computations confirm that this output increases with the index of the patterned layer.",

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AU - Park, Hong Gyu

AU - Lee, Yong Hee

PY - 2008

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N2 - We demonstrate the enhancement of light extraction from a wide-area (500×500 μm2) GaN slab light-emitting diode (LED) that results from covering it with a TiO2 -patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substrate with a laser lift-off process. At the standard current of 60 mA, the wall-plug efficiency of the TiO2 -patterned LED is ∼14.8%, i.e., the efficiency is enhanced by a factor of ∼1.8 over that of nonpatterned LEDs. Our three-dimensional finite-difference time-domain computations confirm that this output increases with the index of the patterned layer.

AB - We demonstrate the enhancement of light extraction from a wide-area (500×500 μm2) GaN slab light-emitting diode (LED) that results from covering it with a TiO2 -patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substrate with a laser lift-off process. At the standard current of 60 mA, the wall-plug efficiency of the TiO2 -patterned LED is ∼14.8%, i.e., the efficiency is enhanced by a factor of ∼1.8 over that of nonpatterned LEDs. Our three-dimensional finite-difference time-domain computations confirm that this output increases with the index of the patterned layer.

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Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer

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