Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells

Jin Kyoung Park, Jin Hyuck Heo, Hye Ji Han, Min Ho Lee, Dae Ho Song, Myoung Sang You, Shi Joon Sung, Dae Hwan Kim, Sang Hyuk Im

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Bilayer type CH3NH3PbI3 (MAPbI3) perovskite hybrid solar cells were fabricated via a one-step spin-coating process by using solubility controlled MAPbI3 solutions of MAPbI3-DMSO (dimethyl sulfoxide) and MAPbI3-DMF (N, N-dimethylformamide)-HI. The best DMSO-bilayer device showed 1.07 ±0.02 V V oc (open-circuit voltage), 20.2 ±0.1 mA cm-2 J sc (short-circuit current density), 68 ±2% FF (fill factor), and 15.2 ±0.3% η (overall power conversion efficiency) under the forward scan direction and 1.07 ±0.02 V V oc, 20.4 ±0.1 mA cm-2 J sc, 70 ±3% FF, and 15.9 ±0.4% η under the reverse scan direction. The best HI-bilayer device had 1.08 ±0.02 V V oc, 20.6 ±0.1 mA cm-2 J sc, 75 ±1% FF, and 17.2 ±0.2% η under the forward scan direction and 1.08 ±0.02 V V oc, 20.6 ±0.1 mA cm-2 J sc, 76 ±2% FF, and 17.4 ±0.3% η under the reverse scan direction. The deviation of average device efficiency ( of 20 DMSO samples and 20 HI samples was 14.2 ±0.95% and 16.2 ±0.85%, respectively. Therefore, the HI-bilayer devices exhibited better device efficiency and smaller J-V (current density-voltage) hysteresis with respect to the scan direction than the DMSO-bilayer devices due to the reduced recombination and traps by the formation of a purer and larger MAPbI3 perovskite crystalline film.

Original languageEnglish
Article number024004
JournalNanotechnology
Volume27
Issue number2
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Hybrid Cells
Open circuit voltage
Dimethyl Sulfoxide
Perovskite
Hysteresis
Solar cells
Equipment and Supplies
Current density
Dimethyl sulfoxide
Spin coating
Dimethylformamide
Short circuit currents
Conversion efficiency
Solubility
Crystalline materials
Genetic Recombination
Direction compound
perovskite
Electric potential

Keywords

  • bilayer
  • hysteresis
  • mesoscopic TiO2
  • perovskite solar cells

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Park, J. K., Heo, J. H., Han, H. J., Lee, M. H., Song, D. H., You, M. S., ... Im, S. H. (2016). Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells. Nanotechnology, 27(2), [024004]. https://doi.org/10.1088/0957-4484/27/2/024004

Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells. / Park, Jin Kyoung; Heo, Jin Hyuck; Han, Hye Ji; Lee, Min Ho; Song, Dae Ho; You, Myoung Sang; Sung, Shi Joon; Kim, Dae Hwan; Im, Sang Hyuk.

In: Nanotechnology, Vol. 27, No. 2, 024004, 01.01.2016.

Research output: Contribution to journalArticle

Park, JK, Heo, JH, Han, HJ, Lee, MH, Song, DH, You, MS, Sung, SJ, Kim, DH & Im, SH 2016, 'Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells', Nanotechnology, vol. 27, no. 2, 024004. https://doi.org/10.1088/0957-4484/27/2/024004
Park, Jin Kyoung ; Heo, Jin Hyuck ; Han, Hye Ji ; Lee, Min Ho ; Song, Dae Ho ; You, Myoung Sang ; Sung, Shi Joon ; Kim, Dae Hwan ; Im, Sang Hyuk. / Efficient hysteresis-less bilayer type CH3NH3PbI3 perovskite hybrid solar cells. In: Nanotechnology. 2016 ; Vol. 27, No. 2.
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abstract = "Bilayer type CH3NH3PbI3 (MAPbI3) perovskite hybrid solar cells were fabricated via a one-step spin-coating process by using solubility controlled MAPbI3 solutions of MAPbI3-DMSO (dimethyl sulfoxide) and MAPbI3-DMF (N, N-dimethylformamide)-HI. The best DMSO-bilayer device showed 1.07 ±0.02 V V oc (open-circuit voltage), 20.2 ±0.1 mA cm-2 J sc (short-circuit current density), 68 ±2{\%} FF (fill factor), and 15.2 ±0.3{\%} η (overall power conversion efficiency) under the forward scan direction and 1.07 ±0.02 V V oc, 20.4 ±0.1 mA cm-2 J sc, 70 ±3{\%} FF, and 15.9 ±0.4{\%} η under the reverse scan direction. The best HI-bilayer device had 1.08 ±0.02 V V oc, 20.6 ±0.1 mA cm-2 J sc, 75 ±1{\%} FF, and 17.2 ±0.2{\%} η under the forward scan direction and 1.08 ±0.02 V V oc, 20.6 ±0.1 mA cm-2 J sc, 76 ±2{\%} FF, and 17.4 ±0.3{\%} η under the reverse scan direction. The deviation of average device efficiency ( of 20 DMSO samples and 20 HI samples was 14.2 ±0.95{\%} and 16.2 ±0.85{\%}, respectively. Therefore, the HI-bilayer devices exhibited better device efficiency and smaller J-V (current density-voltage) hysteresis with respect to the scan direction than the DMSO-bilayer devices due to the reduced recombination and traps by the formation of a purer and larger MAPbI3 perovskite crystalline film.",
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