Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2 O3 Hf O2 Al 2 O3 structure

Seongpil Chang, Yong Won Song, Sanggyu Lee, Sang Yeol Lee, Byeong Kwon Ju

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Charge trapping is dramatically suppressed in ZnO transparent thin film transistors (TFTs) employing a multilayered gate insulator with Hf O2 layer sandwiched by Al2 O3 layers. In spite of its high dielectric constant, Hf O2 has critical drawbacks including huge charge trap density in interfaces. We suggest and demonstrate an elegant solution to minimize the charge trapping introducing Al2 O3 buffer layers. The operation of Al2 O3 Hf O2 Al2 O3 multilayered gate-insulator structure in the ZnO transparent TFT is evaluated to ensure the voltage difference in the hysteresis loop as low as 0.2 V, and the immunization to the threshold voltage shift induced by repeated sweeps of gate voltage.

Original languageEnglish
Article number192104
JournalApplied Physics Letters
Volume92
Issue number19
DOIs
Publication statusPublished - 2008 May 29

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transistors
trapping
retarding
thin films
insulators
electric potential
threshold voltage
buffers
hysteresis
traps
permittivity
shift

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2 O3 Hf O2 Al 2 O3 structure. / Chang, Seongpil; Song, Yong Won; Lee, Sanggyu; Lee, Sang Yeol; Ju, Byeong Kwon.

In: Applied Physics Letters, Vol. 92, No. 19, 192104, 29.05.2008.

Research output: Contribution to journalArticle

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