In this letter, we demonstrate an efficient threshold voltage (Vth) adjustment technique by depositing single or double dielectric layers on MoS2 field-effect transistors (FETs). We used Al2O3 and SiO2 as the capping layers on the MoS2 FET and observed different average Vth shifts of -2.39 and +7.13 V, respectively. In order to further the controllability of the dielectric capping effect, the deposition of double dielectric layers, specifically Al2O3 on SiO2 and vice versa, was used for the first time. Consequently, the deposition of SiO2 on Al2O3 and Al2O3 on SiO2 shows an average Vth shifts of +4.92 and +4.02 V, respectively. The defect charges in the dielectric layer can induce band bending in the MoS2 interface and adjust Vth of the MoS2 FET. This result suggests a promising Vth adjustment technique for transition-metal dichalcogenides-based FETs.
- field effect transistor
- threshold voltage
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering