Electric field control of nonvolatile four-state magnetization at room temperature

Sae Hwan Chun; Yi Sheng Chai; Byung Gu Jeon; Hyung Joon Kim; Yoon Seok Oh; Ingyu Kim; Hanbit Kim; Byeong Jo Jeon; So Young Haam; Ju Young Park; Suk Ho Lee; Jae Ho Chung; Jae Hoon Park; Kee Hoon Kim

doi:10.1103/PhysRevLett.108.177201

Electric field control of nonvolatile four-state magnetization at room temperature

Sae Hwan Chun, Yi Sheng Chai, Byung Gu Jeon, Hyung Joon Kim, Yoon Seok Oh, Ingyu Kim, Hanbit Kim, Byeong Jo Jeon, So Young Haam, Ju Young Park, Suk Ho Lee, Jae Ho Chung, Jae Hoon Park, Kee Hoon Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

134 Citations (Scopus)

Abstract

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba _0.52Sr _2.48Co ₂Fe ₂₄O ₄₁ single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200ps/m. The modulation of magnetization then reaches up to 0.62μ _B/f.u. in an electric field of 1.14MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

Original language	English
Article number	177201
Journal	Physical review letters
Volume	108
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.108.177201
Publication status	Published - 2012 Apr 24

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.108.177201

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title = "Electric field control of nonvolatile four-state magnetization at room temperature",

abstract = "We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba 0.52Sr 2.48Co 2Fe 24O 41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200ps/m. The modulation of magnetization then reaches up to 0.62μ B/f.u. in an electric field of 1.14MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.",

author = "Chun, {Sae Hwan} and Chai, {Yi Sheng} and Jeon, {Byung Gu} and Kim, {Hyung Joon} and Oh, {Yoon Seok} and Ingyu Kim and Hanbit Kim and Jeon, {Byeong Jo} and Haam, {So Young} and Park, {Ju Young} and Lee, {Suk Ho} and Chung, {Jae Ho} and Park, {Jae Hoon} and Kim, {Kee Hoon}",

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doi = "10.1103/PhysRevLett.108.177201",

language = "English",

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T1 - Electric field control of nonvolatile four-state magnetization at room temperature

AU - Chun, Sae Hwan

AU - Chai, Yi Sheng

AU - Jeon, Byung Gu

AU - Kim, Hyung Joon

AU - Oh, Yoon Seok

AU - Kim, Ingyu

AU - Kim, Hanbit

AU - Jeon, Byeong Jo

AU - Haam, So Young

AU - Park, Ju Young

AU - Lee, Suk Ho

AU - Chung, Jae Ho

AU - Park, Jae Hoon

AU - Kim, Kee Hoon

PY - 2012/4/24

Y1 - 2012/4/24

N2 - We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba 0.52Sr 2.48Co 2Fe 24O 41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200ps/m. The modulation of magnetization then reaches up to 0.62μ B/f.u. in an electric field of 1.14MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

AB - We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba 0.52Sr 2.48Co 2Fe 24O 41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200ps/m. The modulation of magnetization then reaches up to 0.62μ B/f.u. in an electric field of 1.14MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

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Electric field control of nonvolatile four-state magnetization at room temperature

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