Electric field control of spin precession in a spin-injected Field Effect Transistor

M. Johnson, Hyun Cheol Koo, J. Eom, S. H. Han, J. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two decades ago, Datta and Das [1] predicted that the source-drain conductance of a spin-injected Field Effect Transistor (spin FET) would oscillate periodically with monotonically increasing gate voltage as a consequence of the Rashba spin-orbit interaction in the channel. The effect relies on ballistic transport and a relativistic transformation, and is unique because an electric field modulates the orientation of a magnetic moment. We have observed Datta-Das oscillations in a spin FET at cryogenic temperatures [2].

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
Pages33-34
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 11
Externally publishedYes
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: 2010 Jun 212010 Jun 23

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period10/6/2110/6/23

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Johnson, M., Koo, H. C., Eom, J., Han, S. H., & Chang, J. (2010). Electric field control of spin precession in a spin-injected Field Effect Transistor. In Device Research Conference - Conference Digest, DRC (pp. 33-34). [5551952] https://doi.org/10.1109/DRC.2010.5551952