Electric field control of spin precession in a spin-injected Field Effect Transistor

M. Johnson; H. C. Koo; J. Eom; S. H. Han; J. Chang

doi:10.1109/DRC.2010.5551952

Electric field control of spin precession in a spin-injected Field Effect Transistor

M. Johnson, H. C. Koo, J. Eom, S. H. Han, J. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two decades ago, Datta and Das [1] predicted that the source-drain conductance of a spin-injected Field Effect Transistor (spin FET) would oscillate periodically with monotonically increasing gate voltage as a consequence of the Rashba spin-orbit interaction in the channel. The effect relies on ballistic transport and a relativistic transformation, and is unique because an electric field modulates the orientation of a magnetic moment. We have observed Datta-Das oscillations in a spin FET at cryogenic temperatures [2].

Original language	English
Title of host publication	68th Device Research Conference, DRC 2010
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2010.5551952
Publication status	Published - 2010
Externally published	Yes
Event	68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States Duration: 2010 Jun 21 → 2010 Jun 23

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	68th Device Research Conference, DRC 2010
Country/Territory	United States
City	Notre Dame, IN
Period	10/6/21 → 10/6/23

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/DRC.2010.5551952

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Johnson, M, Koo, HC, Eom, J, Han, SH & Chang, J 2010, Electric field control of spin precession in a spin-injected Field Effect Transistor. in 68th Device Research Conference, DRC 2010., 5551952, Device Research Conference - Conference Digest, DRC, pp. 33-34, 68th Device Research Conference, DRC 2010, Notre Dame, IN, United States, 10/6/21. https://doi.org/10.1109/DRC.2010.5551952

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title = "Electric field control of spin precession in a spin-injected Field Effect Transistor",

abstract = "Two decades ago, Datta and Das [1] predicted that the source-drain conductance of a spin-injected Field Effect Transistor (spin FET) would oscillate periodically with monotonically increasing gate voltage as a consequence of the Rashba spin-orbit interaction in the channel. The effect relies on ballistic transport and a relativistic transformation, and is unique because an electric field modulates the orientation of a magnetic moment. We have observed Datta-Das oscillations in a spin FET at cryogenic temperatures [2].",

author = "M. Johnson and Koo, {H. C.} and J. Eom and Han, {S. H.} and J. Chang",

year = "2010",

doi = "10.1109/DRC.2010.5551952",

language = "English",

isbn = "9781424478705",

series = "Device Research Conference - Conference Digest, DRC",

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AU - Johnson, M.

AU - Koo, H. C.

AU - Eom, J.

AU - Han, S. H.

AU - Chang, J.

PY - 2010

Y1 - 2010

N2 - Two decades ago, Datta and Das [1] predicted that the source-drain conductance of a spin-injected Field Effect Transistor (spin FET) would oscillate periodically with monotonically increasing gate voltage as a consequence of the Rashba spin-orbit interaction in the channel. The effect relies on ballistic transport and a relativistic transformation, and is unique because an electric field modulates the orientation of a magnetic moment. We have observed Datta-Das oscillations in a spin FET at cryogenic temperatures [2].

AB - Two decades ago, Datta and Das [1] predicted that the source-drain conductance of a spin-injected Field Effect Transistor (spin FET) would oscillate periodically with monotonically increasing gate voltage as a consequence of the Rashba spin-orbit interaction in the channel. The effect relies on ballistic transport and a relativistic transformation, and is unique because an electric field modulates the orientation of a magnetic moment. We have observed Datta-Das oscillations in a spin FET at cryogenic temperatures [2].

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M3 - Conference contribution

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T3 - Device Research Conference - Conference Digest, DRC

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EP - 34

BT - 68th Device Research Conference, DRC 2010

T2 - 68th Device Research Conference, DRC 2010

Y2 - 21 June 2010 through 23 June 2010

ER -

Electric field control of spin precession in a spin-injected Field Effect Transistor

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