Electric field dependence of major electron trap emission in bulk β-Ga2O3: Poole-Frenkel effect versus phonon-assisted tunneling

A. Y. Polyakov, In Hwan Lee, N. B. Smirnov, I. V. Shchemerov, A. A. Vasilev, A. V. Chernykh, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Measurements of deep trap spectra in bulk β-Ga2O3 crystals showed the parameters of the two dominant centers with levels near Ec-0.8 eV (E2) and Ec-1 eV(E3) are affected the electric field during deep level transient spectroscopy (DLTS). Both DLTS spectra measurements of the emission rates of the E2 and E3 traps and measurements of emission rates as a function of electric field from capacitance decay curves obtained at a fixed temperature (380 K) show that, for strong electric field with magnitude above ∼5 × 105 V.cm-1, the emission rates of these traps increase with increasing field. For the E2 traps, the increase is driven by phonon assisted tunneling. This points to the trap being an acceptor, which is consistent with reported attribution of the center to substitutional Fe acceptors. For the E3 trap, the field dependence indicates the dominant mechanism is the Poole-Frenkel effect, operable for Coulombic centers. It is concluded that this commonly observed trap is a deep donor.

Original languageEnglish
Article number304001
JournalJournal of Physics D: Applied Physics
Volume53
Issue number30
DOIs
Publication statusPublished - 2020 Jul 22

Keywords

  • Fe impurity
  • deep level transient spectroscopy
  • gallium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Electric field dependence of major electron trap emission in bulk β-Ga<sub>2</sub>O<sub>3</sub>: Poole-Frenkel effect versus phonon-assisted tunneling'. Together they form a unique fingerprint.

Cite this