Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures

Emre Sari, Sedat Nizamoglu, In Hwan Lee, Jong Hyeob Baek, Hilmi Volkan Demir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing.

Original languageEnglish
Title of host publication2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09
Pages606-607
Number of pages2
DOIs
Publication statusPublished - 2009
Event2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - Belek-Antalya, Turkey
Duration: 2009 Oct 42009 Oct 8

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other2009 IEEE LEOS Annual Meeting Conference, LEOS '09
CountryTurkey
CityBelek-Antalya
Period09/10/409/10/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Sari, E., Nizamoglu, S., Lee, I. H., Baek, J. H., & Demir, H. V. (2009). Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures. In 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09 (pp. 606-607). [4311010] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2009.53