Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields

Emre Sari, Sedat Nizamoglu, In-Hwan Lee, Jong Hyeob Baek, Hilmi Volkan Demir

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.

Original languageEnglish
Article number211107
JournalApplied Physics Letters
Volume94
Issue number21
DOIs
Publication statusPublished - 2009 Jun 11
Externally publishedYes

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radiative recombination
carrier lifetime
life (durability)
electric fields
kinetics
decay
photoluminescence
quantum efficiency
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields. / Sari, Emre; Nizamoglu, Sedat; Lee, In-Hwan; Baek, Jong Hyeob; Demir, Hilmi Volkan.

In: Applied Physics Letters, Vol. 94, No. 21, 211107, 11.06.2009.

Research output: Contribution to journalArticle

Sari, Emre ; Nizamoglu, Sedat ; Lee, In-Hwan ; Baek, Jong Hyeob ; Demir, Hilmi Volkan. / Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields. In: Applied Physics Letters. 2009 ; Vol. 94, No. 21.
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