Electric field effect on spin diffusion in a semiconductor channel

Jae Hyun Kwon, Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

Original languageEnglish
Pages (from-to)2647-2650
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number11 PART 2
DOIs
Publication statusPublished - 2008 Nov
Externally publishedYes

Keywords

  • Bias current
  • Spin accumulation
  • Spin diffusion
  • Spin drift
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Kwon, J. H., Koo, H. C., Eom, J., Chang, J., & Han, S. H. (2008). Electric field effect on spin diffusion in a semiconductor channel. IEEE Transactions on Magnetics, 44(11 PART 2), 2647-2650. https://doi.org/10.1109/TMAG.2008.2002377