Electric field effect on spin diffusion in a semiconductor channel

Jae Hyun Kwon, Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

Original languageEnglish
Pages (from-to)2647-2650
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number11 PART 2
DOIs
Publication statusPublished - 2008 Nov 1
Externally publishedYes

Fingerprint

Electric field effects
Bias currents
Electric fields
Semiconductor materials
Electrons
Direction compound
indium arsenide

Keywords

  • Bias current
  • Spin accumulation
  • Spin diffusion
  • Spin drift
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kwon, J. H., Koo, H. C., Eom, J., Chang, J., & Han, S. H. (2008). Electric field effect on spin diffusion in a semiconductor channel. IEEE Transactions on Magnetics, 44(11 PART 2), 2647-2650. https://doi.org/10.1109/TMAG.2008.2002377

Electric field effect on spin diffusion in a semiconductor channel. / Kwon, Jae Hyun; Koo, Hyun Cheol; Eom, Jonghwa; Chang, Joonyeon; Han, Suk Hee.

In: IEEE Transactions on Magnetics, Vol. 44, No. 11 PART 2, 01.11.2008, p. 2647-2650.

Research output: Contribution to journalArticle

Kwon, JH, Koo, HC, Eom, J, Chang, J & Han, SH 2008, 'Electric field effect on spin diffusion in a semiconductor channel', IEEE Transactions on Magnetics, vol. 44, no. 11 PART 2, pp. 2647-2650. https://doi.org/10.1109/TMAG.2008.2002377
Kwon, Jae Hyun ; Koo, Hyun Cheol ; Eom, Jonghwa ; Chang, Joonyeon ; Han, Suk Hee. / Electric field effect on spin diffusion in a semiconductor channel. In: IEEE Transactions on Magnetics. 2008 ; Vol. 44, No. 11 PART 2. pp. 2647-2650.
@article{9fb39de68b0d4c2794d2884d7f29cda3,
title = "Electric field effect on spin diffusion in a semiconductor channel",
abstract = "In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.",
keywords = "Bias current, Spin accumulation, Spin diffusion, Spin drift, Two-dimensional electron gas",
author = "Kwon, {Jae Hyun} and Koo, {Hyun Cheol} and Jonghwa Eom and Joonyeon Chang and Han, {Suk Hee}",
year = "2008",
month = "11",
day = "1",
doi = "10.1109/TMAG.2008.2002377",
language = "English",
volume = "44",
pages = "2647--2650",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11 PART 2",

}

TY - JOUR

T1 - Electric field effect on spin diffusion in a semiconductor channel

AU - Kwon, Jae Hyun

AU - Koo, Hyun Cheol

AU - Eom, Jonghwa

AU - Chang, Joonyeon

AU - Han, Suk Hee

PY - 2008/11/1

Y1 - 2008/11/1

N2 - In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

AB - In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

KW - Bias current

KW - Spin accumulation

KW - Spin diffusion

KW - Spin drift

KW - Two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=69249229395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249229395&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2008.2002377

DO - 10.1109/TMAG.2008.2002377

M3 - Article

AN - SCOPUS:69249229395

VL - 44

SP - 2647

EP - 2650

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 11 PART 2

ER -