Electric field effect on spin diffusion in a semiconductor channel

Jae Hyun Kwon; Hyun Cheol Koo; Jonghwa Eom; Joonyeon Chang; Suk Hee Han

doi:10.1109/TMAG.2008.2002377

Electric field effect on spin diffusion in a semiconductor channel

Jae Hyun Kwon, Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

Original language	English
Pages (from-to)	2647-2650
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	11 PART 1
DOIs	https://doi.org/10.1109/TMAG.2008.2002377
Publication status	Published - 2008 Nov

Keywords

Bias current
Spin accumulation
Spin diffusion
Spin drift
Two-dimensional electron gas

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2008.2002377

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@article{9fb39de68b0d4c2794d2884d7f29cda3,

title = "Electric field effect on spin diffusion in a semiconductor channel",

abstract = "In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.",

keywords = "Bias current, Spin accumulation, Spin diffusion, Spin drift, Two-dimensional electron gas",

author = "Kwon, {Jae Hyun} and Koo, {Hyun Cheol} and Jonghwa Eom and Joonyeon Chang and Han, {Suk Hee}",

year = "2008",

month = nov,

doi = "10.1109/TMAG.2008.2002377",

language = "English",

volume = "44",

pages = "2647--2650",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11 PART 1",

}

TY - JOUR

T1 - Electric field effect on spin diffusion in a semiconductor channel

AU - Kwon, Jae Hyun

AU - Koo, Hyun Cheol

AU - Eom, Jonghwa

AU - Chang, Joonyeon

AU - Han, Suk Hee

PY - 2008/11

Y1 - 2008/11

N2 - In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

AB - In the diffusive regime, the accumulated spins diffuse out symmetrically in both directions of the InAs channel and the spin signal exponentially decays with the distance. However, considering spin drift induced by the applied electrical current, the spin diffusion occurs in an asymmetric manner. Nonlocal measurements of a lateral spin-valve structure show that the amount of spin polarized electron depends on the direction of the electric field. The magnitude of the nonlocal signal difference due to the bias-current-induced drift effect diminishes from 5.6 mΩ at T = 20 K to close to zero at T = 300 K.

KW - Bias current

KW - Spin accumulation

KW - Spin diffusion

KW - Spin drift

KW - Two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=69249229395&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2008.2002377

DO - 10.1109/TMAG.2008.2002377

M3 - Article

AN - SCOPUS:69249229395

SN - 0018-9464

VL - 44

SP - 2647

EP - 2650

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11 PART 1

ER -

Electric field effect on spin diffusion in a semiconductor channel

Abstract

Keywords

ASJC Scopus subject areas

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