Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots

Sung Ryul Yang, N. Y. Hwang, S. C. Kim, Y. J. Kim, P. S. Park

Research output: Contribution to journalArticle

Abstract

Several different n-type nano semiconductor systems exhibit non-Abelian matrix Berry phases. Non-Abelian matrix Berry phases can be generated by an all electric means in II-VI and III-V n-type semiconductor quantum dots with spin-orbit coupling terms. Non-Abelian matrix Berry phases also appear in semiconductor quantum pumps, and pumped charges can be understood as a manifestation of a non-Abelian matrix Berry phase. In this paper we elucidate the common properties of these semiconductor systems that are responsible for the presence of non-Abelian matrix Berry phases.

Original languageEnglish
Pages (from-to)1241-1242
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 2008 Mar 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots'. Together they form a unique fingerprint.

  • Cite this