Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Ji Hyun Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

Original languageEnglish
Pages (from-to)963-968
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1
Externally publishedYes

Fingerprint

Hole traps
Light emitting diodes
Diodes
light emitting diodes
electrical properties
traps
diodes
Activation energy
implantation
Deep level transient spectroscopy
Electroluminescence
activation energy
Threshold voltage
electrical resistivity
electrical impedance
Spectroscopy
electroluminescence
threshold voltage
Ions
spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kim, Ji Hyun; Ren, F.; Overberg, M. E.; Thaler, G. T.; Abernathy, C. R.; Pearton, S. J.; Lee, C. M.; Chyi, J. I.; Wilson, R. G.; Zavada, J. M.

In: Solid-State Electronics, Vol. 47, No. 6, 01.06.2003, p. 963-968.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Kim, JH, Ren, F, Overberg, ME, Thaler, GT, Abernathy, CR, Pearton, SJ, Lee, CM, Chyi, JI, Wilson, RG & Zavada, JM 2003, 'Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn', Solid-State Electronics, vol. 47, no. 6, pp. 963-968. https://doi.org/10.1016/S0038-1101(02)00463-X
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kim, Ji Hyun ; Ren, F. ; Overberg, M. E. ; Thaler, G. T. ; Abernathy, C. R. ; Pearton, S. J. ; Lee, C. M. ; Chyi, J. I. ; Wilson, R. G. ; Zavada, J. M. / Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn. In: Solid-State Electronics. 2003 ; Vol. 47, No. 6. pp. 963-968.
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AU - Govorkov, A. V.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Lee, C. M.

AU - Chyi, J. I.

AU - Wilson, R. G.

AU - Zavada, J. M.

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N2 - Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

AB - Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

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