Abstract
We present systematic experimental study on the electrical response and two-phonon Raman scattering mode of graphene under small uniaxial strain. The graphene, which was initially grown by chemical vapor deposition, was transferred to a transparent-flexible-polyethylene-terephthalate substrate. It was found that the electrical resistance increases as the stain is increased after a slight decrease in very small strain regimes of <0.20%. This is due to a relaxation of intrinsic ripples created during the transfer of the graphene to the polyethylene-terephthalate substrate. The gauge factor in the linear response regime was found to be about 22. Also, the 2D Raman bands of the strained graphene showed a distinct red-shift of -37 cm -1 per 1% strain for the 2D + mode and -46 cm -1 per 1% strain for the 2D - mode. Finally, we determined the Gruneisen parameters of γ 2Δ+ ∼ 2.05 and γ 2Δ-∼ 2.55 for the phonons in free-standing graphene without a substrate. Our results provide electro-mechanical parameters for graphene-based flexible devices and show the potential of graphene for measuring strain in future flexible electronics.
| Original language | English |
|---|---|
| Article number | 083102 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 Aug 20 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Electrical and lattice vibrational behaviors of graphene devices on flexible substrate under small mechanical strain. / Lee, Yun-Hi; Kim, Yoon Joong.
In: Applied Physics Letters, Vol. 101, No. 8, 083102, 20.08.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and lattice vibrational behaviors of graphene devices on flexible substrate under small mechanical strain
AU - Lee, Yun-Hi
AU - Kim, Yoon Joong
PY - 2012/8/20
Y1 - 2012/8/20
N2 - We present systematic experimental study on the electrical response and two-phonon Raman scattering mode of graphene under small uniaxial strain. The graphene, which was initially grown by chemical vapor deposition, was transferred to a transparent-flexible-polyethylene-terephthalate substrate. It was found that the electrical resistance increases as the stain is increased after a slight decrease in very small strain regimes of <0.20%. This is due to a relaxation of intrinsic ripples created during the transfer of the graphene to the polyethylene-terephthalate substrate. The gauge factor in the linear response regime was found to be about 22. Also, the 2D Raman bands of the strained graphene showed a distinct red-shift of -37 cm -1 per 1% strain for the 2D + mode and -46 cm -1 per 1% strain for the 2D - mode. Finally, we determined the Gruneisen parameters of γ 2Δ+ ∼ 2.05 and γ 2Δ-∼ 2.55 for the phonons in free-standing graphene without a substrate. Our results provide electro-mechanical parameters for graphene-based flexible devices and show the potential of graphene for measuring strain in future flexible electronics.
AB - We present systematic experimental study on the electrical response and two-phonon Raman scattering mode of graphene under small uniaxial strain. The graphene, which was initially grown by chemical vapor deposition, was transferred to a transparent-flexible-polyethylene-terephthalate substrate. It was found that the electrical resistance increases as the stain is increased after a slight decrease in very small strain regimes of <0.20%. This is due to a relaxation of intrinsic ripples created during the transfer of the graphene to the polyethylene-terephthalate substrate. The gauge factor in the linear response regime was found to be about 22. Also, the 2D Raman bands of the strained graphene showed a distinct red-shift of -37 cm -1 per 1% strain for the 2D + mode and -46 cm -1 per 1% strain for the 2D - mode. Finally, we determined the Gruneisen parameters of γ 2Δ+ ∼ 2.05 and γ 2Δ-∼ 2.55 for the phonons in free-standing graphene without a substrate. Our results provide electro-mechanical parameters for graphene-based flexible devices and show the potential of graphene for measuring strain in future flexible electronics.
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U2 - 10.1063/1.4746285
DO - 10.1063/1.4746285
M3 - Article
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 083102
ER -