Electrical and luminescent properties and deep traps spectra of N-polar GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Q. Sun, Y. Zhang, Y. S. Cho, In-Hwan Lee, J. Han

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Electrical and luminescent properties of N-polar undoped GaN films grown using low temperature GaN buffers on on-axis and miscut sapphire and on-axis AlN buffers are compared to the properties of Ga-polar films grown on low temperature GaN buffers. It is shown that the concentration of residual donors increases by about an order of magnitude for on-axis N-polar growth and by two orders of magnitude for off-axis growth compared to Ga-polar films. On-axis films for both Ga-polar and N-polar polarities show the presence of n + interfacial layers greatly influencing the apparent electron concentration and mobility deduced from capacitance-voltage C-V measurements. These interfacial layers are much less prominent in the miscut N-polar films. Growth on N-polar greatly increases the concentration of electron traps with activation energy of 0.9 eV possibly related to Ga-interstitials.

Original languageEnglish
Pages (from-to)83-88
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume166
Issue number1
DOIs
Publication statusPublished - 2010 Jan 15
Externally publishedYes

Fingerprint

electrical properties
traps
Buffers
buffers
Electron traps
Aluminum Oxide
Sapphire
polarity
interstitials
sapphire
electrons
Capacitance
Activation energy
capacitance
activation energy
Temperature
Electrons
Electric potential
electric potential

Keywords

  • Deep traps
  • III-Nitrides
  • MOCVD
  • N-polar

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Electrical and luminescent properties and deep traps spectra of N-polar GaN films. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Sun, Q.; Zhang, Y.; Cho, Y. S.; Lee, In-Hwan; Han, J.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 166, No. 1, 15.01.2010, p. 83-88.

Research output: Contribution to journalArticle

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Sun, Q. ; Zhang, Y. ; Cho, Y. S. ; Lee, In-Hwan ; Han, J. / Electrical and luminescent properties and deep traps spectra of N-polar GaN films. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2010 ; Vol. 166, No. 1. pp. 83-88.
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AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Sun, Q.

AU - Zhang, Y.

AU - Cho, Y. S.

AU - Lee, In-Hwan

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AB - Electrical and luminescent properties of N-polar undoped GaN films grown using low temperature GaN buffers on on-axis and miscut sapphire and on-axis AlN buffers are compared to the properties of Ga-polar films grown on low temperature GaN buffers. It is shown that the concentration of residual donors increases by about an order of magnitude for on-axis N-polar growth and by two orders of magnitude for off-axis growth compared to Ga-polar films. On-axis films for both Ga-polar and N-polar polarities show the presence of n + interfacial layers greatly influencing the apparent electron concentration and mobility deduced from capacitance-voltage C-V measurements. These interfacial layers are much less prominent in the miscut N-polar films. Growth on N-polar greatly increases the concentration of electron traps with activation energy of 0.9 eV possibly related to Ga-interstitials.

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