Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Ji Hyun Kim, F. Ren, G. T. Thaler, R. M. Frazier, B. P. Gila, C. R. Abernathy, S. J. Pearton, I. A. Buyanova, G. Y. Rudko, W. M. Chen, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn, This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

Original languageEnglish
Pages (from-to)241-247
Number of pages7
JournalJournal of Electronic Materials
Volume33
Issue number3
Publication statusPublished - 2004 Mar 1
Externally publishedYes

Fingerprint

Light emitting diodes
light emitting diodes
electrical properties
Electroluminescence
electroluminescence
Threshold voltage
Magnetization
Thermodynamic stability
Metals
polarization modulation
Modulation
Annealing
Polarization
Magnetic fields
Temperature
retaining
threshold voltage
thermal stability
annealing
room temperature

Keywords

  • Electroluminescence (EL)
  • GaN/InGaN
  • Light-emitting diodes (LEDs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J. H., Ren, F., Thaler, G. T., ... Zavada, J. M. (2004). Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes. Journal of Electronic Materials, 33(3), 241-247.

Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kim, Ji Hyun; Ren, F.; Thaler, G. T.; Frazier, R. M.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Buyanova, I. A.; Rudko, G. Y.; Chen, W. M.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Zavada, J. M.

In: Journal of Electronic Materials, Vol. 33, No. 3, 01.03.2004, p. 241-247.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Kim, JH, Ren, F, Thaler, GT, Frazier, RM, Gila, BP, Abernathy, CR, Pearton, SJ, Buyanova, IA, Rudko, GY, Chen, WM, Pan, CC, Chen, GT, Chyi, JI & Zavada, JM 2004, 'Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes', Journal of Electronic Materials, vol. 33, no. 3, pp. 241-247.
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kim, Ji Hyun ; Ren, F. ; Thaler, G. T. ; Frazier, R. M. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. ; Buyanova, I. A. ; Rudko, G. Y. ; Chen, W. M. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. ; Zavada, J. M. / Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes. In: Journal of Electronic Materials. 2004 ; Vol. 33, No. 3. pp. 241-247.
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abstract = "Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called {"}spin-LEDs{"}). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn, This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.",
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AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Thaler, G. T.

AU - Frazier, R. M.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Buyanova, I. A.

AU - Rudko, G. Y.

AU - Chen, W. M.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Zavada, J. M.

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N2 - Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn, This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

AB - Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn, This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

KW - Electroluminescence (EL)

KW - GaN/InGaN

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