Electrical and magnetic interaction along a defective single-walled carbon nanotube channel

Yun-Hi Lee, Ji Young Noh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study the electrical and magnetic interaction in a low conduction regime for laterally as-grown defective single-walled carbon nanotube channel as functions of bias and gate voltage, combined with direct current and magnetic phase image by current-atomic force microscopy and magnetic force microscopy. For the SWNT field effect transistor at very low bias direct imaging of the current flow on the 0.9 and 2 nm diameter single-walled nanotube (SWNT) devices revealed that locally conducting islands occur along the SWNT channel, and become an origin of electrical behavior in the stage of minimal conduction. In contrast, the homogenous magnetic interaction along the as-laterally-grown individual SWNT channel observed by magnetic force measurements suggest a hint that as-grown single SWNT channel may be a reliable candidate for use in magnetoelectronics, regardless of whether clean or defective SWNT.

Original languageEnglish
Article number163109
JournalApplied Physics Letters
Volume94
Issue number16
DOIs
Publication statusPublished - 2009 May 6

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nanotubes
carbon nanotubes
interactions
conduction
magnetic force microscopy
field effect transistors
direct current
atomic force microscopy
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical and magnetic interaction along a defective single-walled carbon nanotube channel. / Lee, Yun-Hi; Noh, Ji Young.

In: Applied Physics Letters, Vol. 94, No. 16, 163109, 06.05.2009.

Research output: Contribution to journalArticle

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