Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates

Sukhyung Park, Kyoungah Cho, Hyungon Oh, Sangsig Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, we report the electrical and mechanical characteristics of fully transparent indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated on stress-relieving bendable substrates. An IZO TFT on a stress-relieving substrate can operate normally at a bending radius of 6 mm, while an IZO TFT on a normal plastic substrate fails to operate normally at a bending radius of 15 mm. A plastic island with high Young's modulus embedded on a soft elastomer layer with low Young's modulus plays the role of a stress-relieving substrate for the operation of the bent IZO TFT. The stress and strain distributions over the IZO TFT will be analyzed in detail in this paper.

Original languageEnglish
Article number143504
JournalApplied Physics Letters
Volume109
Issue number14
DOIs
Publication statusPublished - 2016 Oct 3

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stress relieving
zinc oxides
indium oxides
transistors
thin films
modulus of elasticity
plastics
radii
strain distribution
elastomers
stress distribution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates. / Park, Sukhyung; Cho, Kyoungah; Oh, Hyungon; Kim, Sangsig.

In: Applied Physics Letters, Vol. 109, No. 14, 143504, 03.10.2016.

Research output: Contribution to journalArticle

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