In this study, we report the electrical and mechanical characteristics of fully transparent indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated on stress-relieving bendable substrates. An IZO TFT on a stress-relieving substrate can operate normally at a bending radius of 6 mm, while an IZO TFT on a normal plastic substrate fails to operate normally at a bending radius of 15 mm. A plastic island with high Young's modulus embedded on a soft elastomer layer with low Young's modulus plays the role of a stress-relieving substrate for the operation of the bent IZO TFT. The stress and strain distributions over the IZO TFT will be analyzed in detail in this paper.
|Journal||Applied Physics Letters|
|Publication status||Published - 2016 Oct 3|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)