Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

Jun Ho Kim, Hyeong Seop Im, Dae Woong Hwang, Sun Kyung Kim, Dukkyu Bae, Young Zo Yoo, Kyeong Seok Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

Original languageEnglish
Pages (from-to)3693-3697
Number of pages5
JournalCeramics International
Volume43
Issue number4
DOIs
Publication statusPublished - 2017 Mar 1

Keywords

  • Finite-difference time-domain simulation
  • Hole-patterned Ag layer
  • Si-doped ZnO
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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