Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

Jun Ho Kim; Hyeong Seop Im; Dae Woong Hwang; Sun Kyung Kim; Dukkyu Bae; Young Zo Yoo; Kyeong Seok Lee; Tae Yeon Seong

doi:10.1016/j.ceramint.2016.11.213

Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

Jun Ho Kim, Hyeong Seop Im, Dae Woong Hwang, Sun Kyung Kim, Dukkyu Bae, Young Zo Yoo, Kyeong Seok Lee, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×10²² to 2.4×10²² cm⁻³, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10^–3 Ω^–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

Original language	English
Pages (from-to)	3693-3697
Number of pages	5
Journal	Ceramics International
Volume	43
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2016.11.213
Publication status	Published - 2017 Mar 1

Keywords

Finite-difference time-domain simulation
Hole-patterned Ag layer
Si-doped ZnO
Transparent conducting electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2016.11.213

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title = "Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films",

abstract = "Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.",

keywords = "Finite-difference time-domain simulation, Hole-patterned Ag layer, Si-doped ZnO, Transparent conducting electrode",

author = "Kim, {Jun Ho} and Im, {Hyeong Seop} and Hwang, {Dae Woong} and Kim, {Sun Kyung} and Dukkyu Bae and Yoo, {Young Zo} and Lee, {Kyeong Seok} and Seong, {Tae Yeon}",

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T1 - Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

AU - Kim, Jun Ho

AU - Im, Hyeong Seop

AU - Hwang, Dae Woong

AU - Kim, Sun Kyung

AU - Bae, Dukkyu

AU - Yoo, Young Zo

AU - Lee, Kyeong Seok

AU - Seong, Tae Yeon

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

AB - Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

KW - Finite-difference time-domain simulation

KW - Hole-patterned Ag layer

KW - Si-doped ZnO

KW - Transparent conducting electrode

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Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

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