Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

Jun Ho Kim, Hyeong Seop Im, Dae Woong Hwang, Sun Kyung Kim, Dukkyu Bae, Young Zo Yoo, Kyeong Seok Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

Original languageEnglish
Pages (from-to)3693-3697
Number of pages5
JournalCeramics International
Volume43
Issue number4
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

Multilayer films
Multilayers
Oxides
Sheet resistance
Carrier concentration
Electric properties
Optical properties
Metals
Infrared radiation
Wavelength

Keywords

  • Finite-difference time-domain simulation
  • Hole-patterned Ag layer
  • Si-doped ZnO
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films. / Kim, Jun Ho; Im, Hyeong Seop; Hwang, Dae Woong; Kim, Sun Kyung; Bae, Dukkyu; Yoo, Young Zo; Lee, Kyeong Seok; Seong, Tae Yeon.

In: Ceramics International, Vol. 43, No. 4, 01.03.2017, p. 3693-3697.

Research output: Contribution to journalArticle

Kim, Jun Ho ; Im, Hyeong Seop ; Hwang, Dae Woong ; Kim, Sun Kyung ; Bae, Dukkyu ; Yoo, Young Zo ; Lee, Kyeong Seok ; Seong, Tae Yeon. / Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films. In: Ceramics International. 2017 ; Vol. 43, No. 4. pp. 3693-3697.
@article{8f151f4c7c644742a359539fa7f14aee,
title = "Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films",
abstract = "Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.",
keywords = "Finite-difference time-domain simulation, Hole-patterned Ag layer, Si-doped ZnO, Transparent conducting electrode",
author = "Kim, {Jun Ho} and Im, {Hyeong Seop} and Hwang, {Dae Woong} and Kim, {Sun Kyung} and Dukkyu Bae and Yoo, {Young Zo} and Lee, {Kyeong Seok} and Seong, {Tae Yeon}",
year = "2017",
month = "3",
day = "1",
doi = "10.1016/j.ceramint.2016.11.213",
language = "English",
volume = "43",
pages = "3693--3697",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",
number = "4",

}

TY - JOUR

T1 - Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films

AU - Kim, Jun Ho

AU - Im, Hyeong Seop

AU - Hwang, Dae Woong

AU - Kim, Sun Kyung

AU - Bae, Dukkyu

AU - Yoo, Young Zo

AU - Lee, Kyeong Seok

AU - Seong, Tae Yeon

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

AB - Hole-patterned Ag layers were first used to form Si-doped ZnO (SZO)/hole-patterned Ag/SZO multilayers and their optical and electrical properties were characterized. Unlike conventional oxide/metal/oxide multilayers, all samples exhibited two characteristic features: (i) a sinusoidal wavelength dependence of the transmittance with double maxima, and (ii) undulation in the visible transmittance, but not in the infrared transmittance. With increasing SZO thickness, the transmittance maxima were red-shifted, and the visible transmittance window widened. The carrier concentration decreased from 7.42×1022 to 2.4×1022 cm−3, and the sheet resistances varied from 7 to 10 Ω/sq with increasing SZO thickness. Haacke's figure of merit (FOM) was calculated for the SZO-based multilayer films. The 40 nm-thick SZO multilayers had the highest FOM of 15.9×10–3 Ω–1. Finite-difference time-domain (FDTD) simulations were undertaken to interpret the measured transmittance. Based on the FDTD simulations, the undulating transmittance was attributed to surface plasmon-polaritons.

KW - Finite-difference time-domain simulation

KW - Hole-patterned Ag layer

KW - Si-doped ZnO

KW - Transparent conducting electrode

UR - http://www.scopus.com/inward/record.url?scp=85007143198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007143198&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2016.11.213

DO - 10.1016/j.ceramint.2016.11.213

M3 - Article

VL - 43

SP - 3693

EP - 3697

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 4

ER -