Electrical and optical properties of point-contacted a-Si: H/c-Si heterojunction solar cells with patterned SiO2 at the interface

Young Woo Ok, Tae Yeon Seong, Donghwan Kim, Sang Kyun Kim, Jeong Chul Lee, Kyung Hoon Yoon, Jinsoo Song

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8 Citations (Scopus)


We report on the electrical and optical characteristics of a-Si:H/c-Si heterojunction solar cells with point-contact junction via patterned SiO2 layer at the interface. The new structure showed improved electrical properties, having a smaller leakage current and a larger shunt resistance. The electrical conduction of the point-contacted samples followed the diffusion dominant process with bulk recombination, but the control samples without SiO2 showed the space-charge region recombination dominant process. The point-contacted samples showed increased internal quantum efficiency in the bulk region, but decreased internal quantum efficiency in the surface region. As the distance between the holes decreased, the point-contacted solar cells showed an improved efficiency with a larger fill-factor but smaller open-circuit voltage and short-circuit current.

Original languageEnglish
Pages (from-to)1366-1370
Number of pages5
JournalSolar Energy Materials and Solar Cells
Issue number14
Publication statusPublished - 2007 Sep 6



  • Amorphous Si
  • Crystalline Si
  • Heterojunction
  • Passivation
  • Point contact

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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