Abstract
We have performed detailed studies on the stability of the major irradiation-induced defect H2 in p-InxGa1-xP under various biases, in order to clarify the dependence of reaction rates on the position of the Fermi level in the absence of minority-carrier injection and electron-hole recombination. The dependence of the annealing rates on the electrical injection current has been analyzed at different temperatures by using a variety of electrical and optical experiments, such as deep-level transient spectroscopy, thermally stimulated capacitance, deep-level optical spectroscopy (DLOS), and photocapacitance (PHCAP). The energy of multiphonon emissions due to e-h recombination at the H2 center is estimated to be 1.36eV. The capture cross section of the H2 trap for electrons under e-h recombination process is evaluated as σn=3×10- 12cm2, which is found to be significantly larger than the hole capture cross section (σp=1×10-16cm2). The photoionization energy 0.94±0.10eV is estimated by DLOS and confirmed by PHCAP experiments. The Frank-Condon shift value is estimated to be 0.45±0.10eV. In order to fully explain the athermal annihilation mechanism of the H2 center under minority-carrier injection condition, a configuration coordinate diagram model has been proposed based on the measured physical parameters in this study.
| Original language | English |
|---|---|
| Article number | 155320 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 72 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2005 Oct 15 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Electrical and optical properties of radiation-induced dominant recombination center in InxGa1-xP space solar cells. / Adachi, M.; Khan, A.; Ando, K.; Ekins-Daukes, N. J.; Lee, Haeseok; Yamaguchi, M.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 15, 155320, 15.10.2005.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and optical properties of radiation-induced dominant recombination center in InxGa1-xP space solar cells
AU - Adachi, M.
AU - Khan, A.
AU - Ando, K.
AU - Ekins-Daukes, N. J.
AU - Lee, Haeseok
AU - Yamaguchi, M.
PY - 2005/10/15
Y1 - 2005/10/15
N2 - We have performed detailed studies on the stability of the major irradiation-induced defect H2 in p-InxGa1-xP under various biases, in order to clarify the dependence of reaction rates on the position of the Fermi level in the absence of minority-carrier injection and electron-hole recombination. The dependence of the annealing rates on the electrical injection current has been analyzed at different temperatures by using a variety of electrical and optical experiments, such as deep-level transient spectroscopy, thermally stimulated capacitance, deep-level optical spectroscopy (DLOS), and photocapacitance (PHCAP). The energy of multiphonon emissions due to e-h recombination at the H2 center is estimated to be 1.36eV. The capture cross section of the H2 trap for electrons under e-h recombination process is evaluated as σn=3×10- 12cm2, which is found to be significantly larger than the hole capture cross section (σp=1×10-16cm2). The photoionization energy 0.94±0.10eV is estimated by DLOS and confirmed by PHCAP experiments. The Frank-Condon shift value is estimated to be 0.45±0.10eV. In order to fully explain the athermal annihilation mechanism of the H2 center under minority-carrier injection condition, a configuration coordinate diagram model has been proposed based on the measured physical parameters in this study.
AB - We have performed detailed studies on the stability of the major irradiation-induced defect H2 in p-InxGa1-xP under various biases, in order to clarify the dependence of reaction rates on the position of the Fermi level in the absence of minority-carrier injection and electron-hole recombination. The dependence of the annealing rates on the electrical injection current has been analyzed at different temperatures by using a variety of electrical and optical experiments, such as deep-level transient spectroscopy, thermally stimulated capacitance, deep-level optical spectroscopy (DLOS), and photocapacitance (PHCAP). The energy of multiphonon emissions due to e-h recombination at the H2 center is estimated to be 1.36eV. The capture cross section of the H2 trap for electrons under e-h recombination process is evaluated as σn=3×10- 12cm2, which is found to be significantly larger than the hole capture cross section (σp=1×10-16cm2). The photoionization energy 0.94±0.10eV is estimated by DLOS and confirmed by PHCAP experiments. The Frank-Condon shift value is estimated to be 0.45±0.10eV. In order to fully explain the athermal annihilation mechanism of the H2 center under minority-carrier injection condition, a configuration coordinate diagram model has been proposed based on the measured physical parameters in this study.
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U2 - 10.1103/PhysRevB.72.155320
DO - 10.1103/PhysRevB.72.155320
M3 - Article
VL - 72
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 15
M1 - 155320
ER -