Electrical and optical properties of radiation-induced dominant recombination center in InxGa1-xP space solar cells

M. Adachi, A. Khan, K. Ando, N. J. Ekins-Daukes, Haeseok Lee, M. Yamaguchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have performed detailed studies on the stability of the major irradiation-induced defect H2 in p-InxGa1-xP under various biases, in order to clarify the dependence of reaction rates on the position of the Fermi level in the absence of minority-carrier injection and electron-hole recombination. The dependence of the annealing rates on the electrical injection current has been analyzed at different temperatures by using a variety of electrical and optical experiments, such as deep-level transient spectroscopy, thermally stimulated capacitance, deep-level optical spectroscopy (DLOS), and photocapacitance (PHCAP). The energy of multiphonon emissions due to e-h recombination at the H2 center is estimated to be 1.36eV. The capture cross section of the H2 trap for electrons under e-h recombination process is evaluated as σn=3×10- 12cm2, which is found to be significantly larger than the hole capture cross section (σp=1×10-16cm2). The photoionization energy 0.94±0.10eV is estimated by DLOS and confirmed by PHCAP experiments. The Frank-Condon shift value is estimated to be 0.45±0.10eV. In order to fully explain the athermal annihilation mechanism of the H2 center under minority-carrier injection condition, a configuration coordinate diagram model has been proposed based on the measured physical parameters in this study.

Original languageEnglish
Article number155320
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number15
DOIs
Publication statusPublished - 2005 Oct 15
Externally publishedYes

Fingerprint

Solar cells
Electric properties
Optical properties
solar cells
electrical properties
Radiation
optical properties
Photoionization
Deep level transient spectroscopy
Electrons
carrier injection
radiation
minority carriers
Fermi level
absorption cross sections
Reaction rates
Capacitance
Experiments
Irradiation
Annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical and optical properties of radiation-induced dominant recombination center in InxGa1-xP space solar cells. / Adachi, M.; Khan, A.; Ando, K.; Ekins-Daukes, N. J.; Lee, Haeseok; Yamaguchi, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 15, 155320, 15.10.2005.

Research output: Contribution to journalArticle

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