Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

Younghun Jung, Michael Mastro, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.

Original languageEnglish
Pages (from-to)1747-1750
Number of pages4
JournalThin Solid Films
Volume518
Issue number6
DOIs
Publication statusPublished - 2010 Jan 1

Fingerprint

Heterojunctions
Sapphire
high voltages
Transistors
sapphire
depletion
Nucleation
transistors
nucleation
Fabrication
fabrication
Aluminum Oxide
augmentation
Electric potential
aluminum gallium nitride

Keywords

  • Gallium nitride
  • Metal-organic chemical vapor deposition
  • Non-polar structure
  • Scanning electron microscopy
  • Schottky contact
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures. / Jung, Younghun; Mastro, Michael; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.

In: Thin Solid Films, Vol. 518, No. 6, 01.01.2010, p. 1747-1750.

Research output: Contribution to journalArticle

Jung, Younghun ; Mastro, Michael ; Hite, Jennifer ; Eddy, Charles R. ; Kim, Ji Hyun. / Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures. In: Thin Solid Films. 2010 ; Vol. 518, No. 6. pp. 1747-1750.
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