Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

Younghun Jung, Michael Mastro, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.

Original languageEnglish
Pages (from-to)1747-1750
Number of pages4
JournalThin Solid Films
Volume518
Issue number6
DOIs
Publication statusPublished - 2010 Jan 1

Keywords

  • Gallium nitride
  • Metal-organic chemical vapor deposition
  • Non-polar structure
  • Scanning electron microscopy
  • Schottky contact
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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