Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Lee Woon Jang, Dae Woo Jeon, A. Y. Polyakov, A. V. Govorkov, V. N. Sokolov, N. B. Smirnov, Han Su Cho, Jin Hyeon Yun, K. D. Shcherbatchev, Jong Hyeob Baek, In-Hwan Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE-PECE treatment. Overgrowth of LED structures on the ECE-PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.

Original languageEnglish
Pages (from-to)507-512
Number of pages6
JournalJournal of Alloys and Compounds
Volume589
DOIs
Publication statusPublished - 2014 Mar 15
Externally publishedYes

Fingerprint

Electrochemical etching
Light emitting diodes
Structural properties
Etching
Electric properties
Quantum efficiency
Semiconductor quantum wells
Luminescence
Polarization

Keywords

  • Electrochemical etching
  • Light-emitting diodes
  • Photo-electrochemical etching
  • Porous GaN

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching. / Jang, Lee Woon; Jeon, Dae Woo; Polyakov, A. Y.; Govorkov, A. V.; Sokolov, V. N.; Smirnov, N. B.; Cho, Han Su; Yun, Jin Hyeon; Shcherbatchev, K. D.; Baek, Jong Hyeob; Lee, In-Hwan.

In: Journal of Alloys and Compounds, Vol. 589, 15.03.2014, p. 507-512.

Research output: Contribution to journalArticle

Jang, Lee Woon ; Jeon, Dae Woo ; Polyakov, A. Y. ; Govorkov, A. V. ; Sokolov, V. N. ; Smirnov, N. B. ; Cho, Han Su ; Yun, Jin Hyeon ; Shcherbatchev, K. D. ; Baek, Jong Hyeob ; Lee, In-Hwan. / Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching. In: Journal of Alloys and Compounds. 2014 ; Vol. 589. pp. 507-512.
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abstract = "Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE-PECE treatment. Overgrowth of LED structures on the ECE-PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.",
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AU - Jang, Lee Woon

AU - Jeon, Dae Woo

AU - Polyakov, A. Y.

AU - Govorkov, A. V.

AU - Sokolov, V. N.

AU - Smirnov, N. B.

AU - Cho, Han Su

AU - Yun, Jin Hyeon

AU - Shcherbatchev, K. D.

AU - Baek, Jong Hyeob

AU - Lee, In-Hwan

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AB - Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE-PECE treatment. Overgrowth of LED structures on the ECE-PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.

KW - Electrochemical etching

KW - Light-emitting diodes

KW - Photo-electrochemical etching

KW - Porous GaN

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