Electrical and structural properties of Ti/Au ohniic contacts to n-ZnO

Han Ki Kim, Sang Heon Han, Tae Yeon Seong, W. K. Choi

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

We have investigated Ti/Au (30/50 nm) ohmic contacts to n-ZnO:Al. The samples are annealed at temperatures of 300 and 500°C for 60 s in a flowing N 2 atmosphere. Current-voltage measurements show that the as-deposited sample is ohmic with a specific contact resistance of 2 × 10 -2 Ω cm 2. However, annealing of the sample at 300°C results in much better ohmic behavior with a contact resistance of 2 × 10 -4 Ω cm 2. Further increase in annealing temperature (500°C) causes the degradation of the ohmic property. Glancing angle X-ray diffraction and Auger electron spectroscopy are used to investigate interfacial reactions between the Ti/Au and ZnO layers. It is shown that both rutile and srilankite TiO 2 phases are formed in the as-deposited and annealed samples. It is further shown that annealing at 500°C results in the formation of new phases such as Ti 3Au and TiAu 2. A possible explanation is given to describe the annealing temperature dependence of the specific contact resistance.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume148
Issue number3
Publication statusPublished - 2001 Dec 1
Externally publishedYes

Fingerprint

Structural properties
Electric properties
Contact resistance
contact resistance
electrical properties
Annealing
annealing
Ohmic contacts
Voltage measurement
Electric current measurement
Auger electron spectroscopy
Surface chemistry
rutile
Temperature
electrical measurement
Auger spectroscopy
electron spectroscopy
electric contacts
degradation
atmospheres

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Electrical and structural properties of Ti/Au ohniic contacts to n-ZnO. / Kim, Han Ki; Han, Sang Heon; Seong, Tae Yeon; Choi, W. K.

In: Journal of the Electrochemical Society, Vol. 148, No. 3, 01.12.2001.

Research output: Contribution to journalArticle

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