Electrical and structural properties of W ohmic contacts to InGaN

Han K. Kim, Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Low-resistance ohmic contacts to the Si-doped In0.17Ga0.83N (nd = 1.63 × 1019 cm-3) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950°C for 90 s results in a specific contact resistance of 2.7 × 10-8 Ω cm2. X-ray diffraction results show that a β-W2N phase is formed at the interface between the W and InGaN when annealed at temperatures >500°C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.

Original languageEnglish
Pages (from-to)1573-1576
Number of pages4
JournalJournal of the Electrochemical Society
Volume147
Issue number4
DOIs
Publication statusPublished - 2000 Apr 1
Externally publishedYes

Fingerprint

Ohmic contacts
Structural properties
electric contacts
Electric properties
Contact resistance
contact resistance
electrical properties
Annealing
annealing
Temperature
low resistance
Metallizing
temperature
conduction
X ray diffraction
temperature dependence
diffraction
x rays

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Electrical and structural properties of W ohmic contacts to InGaN. / Kim, Han K.; Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Journal of the Electrochemical Society, Vol. 147, No. 4, 01.04.2000, p. 1573-1576.

Research output: Contribution to journalArticle

Kim, Han K. ; Jang, Ja Soon ; Park, Seong J. ; Seong, Tae Yeon. / Electrical and structural properties of W ohmic contacts to InGaN. In: Journal of the Electrochemical Society. 2000 ; Vol. 147, No. 4. pp. 1573-1576.
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