Low-resistance ohmic contacts to the Si-doped In0.17Ga0.83N (nd = 1.63 × 1019 cm-3) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950°C for 90 s results in a specific contact resistance of 2.7 × 10-8 Ω cm2. X-ray diffraction results show that a β-W2N phase is formed at the interface between the W and InGaN when annealed at temperatures >500°C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry